FDG328P Fairchild Semiconductor, FDG328P Datasheet - Page 2

• Manufacturer Part Number: FDG328P
• Description: MOSFET P-CH 20V 1.5A SC70-6
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDG328P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 145 mOhm @ 1.5A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 1.5A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 6nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 337pF @ 10V
• Power - Max: 480mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Configuration: Single Quad Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.145 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 5 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 1.5 A
• Power Dissipation: 750 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Notes:
1. R
2. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%
Electrical Characteristics
Symbol
Off Characteristics
BV
I
I
I
On Characteristics
V
R
I
g
Drain–Source Diode Characteristics and Maximum Ratings
I
V
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
DSS
GSSF
GSSR
D(on)
d(on)
r
d(off)
f
S
BV
V
FS
GS(th)
SD
DS(on)
iss
oss
rss
g
gs
gd
JA
GS(th)
DSS
T
T
the drain pins. R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
DSS
J
J
a.)
b.)
170°/W when mounted on a 1 in
260°/W when mounted on a minimum pad.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
JC
is guaranteed by design while R
Parameter
(Note 2)
2
pad of 2 oz. copper.
(Note 2)
CA
is determined by the user's board design.
V
I
V
V
V
V
I
V
V
V
V
V
V
f = 1.0 MHz
V
V
V
V
V
D
D
T
GS
DS
GS
GS
DS
GS
GS
GS
GS
DS
DS
DD
GS
DS
GS
GS
= –250 A, Referenced to 25 C
= –250 A, Referenced to 25 C
A
= 25°C unless otherwise noted
= 0 V, I
= –16 V,
= 12 V,
= –12 V,
= V
= –4.5 V,
= –2.5 V,
= –4.5 V, I
= –4.5 V,
= –5 V,
= –10 V, V
= –10 V, I
= –4.5 V, R
= –10 V, I
= –4.5 V
= 0 V,
Test Conditions
GS
, I
D
D
I
= –250 A
= –250 A
S
D
D
D
GS
= –0.62 A
= –1.5 A,
V
V
GEN
= 1 A,
V
= –1.5 A, T
I
I
GS
DS
D
D
V
I
DS
= 0 V,
D
DS
= –1.5 A
= –1.2 A
= 6
= 0 V
= 0 V
= –1.5 A
= 0 V
= –5 V
(Note 2)
J
=125°C
Min
–0.6
–20
–3
Typ Max Units
–0.7
120
169
156
–9
3
5
337
3.7
0.7
1.3
88
51
12
10
9
5
–0.62
–100
–1.5
–1.2
100
145
210
203
–1
18
22
20
10
FDG328P Rev C(W)
6
mV/ C
mV/ C
m
nA
nA
V
V
A
S
A
V
A
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns