FDC640P Fairchild Semiconductor, FDC640P Datasheet - Page 4

MOSFET P-CH 20V 4.5A SSOT-6

FDC640P

Manufacturer Part Number
FDC640P
Description
MOSFET P-CH 20V 4.5A SSOT-6
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDC640P

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
53 mOhm @ 4.5A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
4.5A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
13nC @ 4.5V
Input Capacitance (ciss) @ Vds
890pF @ 10V
Power - Max
800mW
Mounting Type
Surface Mount
Package / Case
6-SSOT, SuperSOT-6
Configuration
Single Quad Drain
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.053 Ohm @ 4.5 V
Forward Transconductance Gfs (max / Min)
16 S
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
4.5 A
Power Dissipation
1600 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDC640P

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Typical Characteristics
5
4
3
2
1
0
0.01
100
0.1
10
Figure 9. Maximum Safe Operating Area.
0
1
Figure 7. Gate Charge Characteristics.
I
0.1
D
0.001
0.01
= -4.5A
R
0.1
SINGLE PULSE
R
0.00001
DS(ON)
1
V
JA
T
GS
A
= 156
2
= 25
LIMIT
= -4.5V
D = 0.5
o
o
C
C/W
0.2
-V
0.1
DS
0.05
, DRAIN-SOURCE VOLTAGE (V)
0.02
4
Q
g
1
0.01
, GATE CHARGE (nC)
0.0001
DC
SINGLE PULSE
10s
6
1s
V
Figure 11. Transient Thermal Response Curve.
DS
100ms
= -5V
Thermal characterization performed using the conditions described in Note 1b
Transient thermal response will change depending on the circuit board design.
10ms
0.001
8
10
1ms
-15V
100 s
10
-10V
0.01
100
12
t
1
, TIME (sec)
0.1
1200
1000
5
4
3
2
1
0
800
600
400
200
0.1
0
Figure 8. Capacitance Characteristics.
0
Figure 10. Single Pulse Maximum
1
1
-V
Power Dissipation.
DS
5
, DRAIN TO SOURCE VOLTAGE (V)
C
C
C
ISS
OSS
RSS
t
1
, TIME (sec)
10
10
10
P(pk)
Duty Cycle, D = t
T
R
J
R
SINGLE PULSE
R
JA
- T
100
JA
(t) = r(t) + R
JA
T
100
A
15
A
t
= 156°C/W
= 156°C/W
1
= P * R
= 25°C
t
2
FDC640P Rev E(W)
V
f = 1MHz
GS
= 0 V
JA
1
JA
(t)
/ t
1000
2
20
1000

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