FDC640P Fairchild Semiconductor, FDC640P Datasheet - Page 3

• Manufacturer Part Number: FDC640P
• Description: MOSFET P-CH 20V 4.5A SSOT-6
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDC640P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 53 mOhm @ 4.5A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 4.5A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 13nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 890pF @ 10V
• Power - Max: 800mW
• Mounting Type: Surface Mount
• Package / Case: 6-SSOT, SuperSOT-6
• Configuration: Single Quad Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.053 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 16 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 4.5 A
• Power Dissipation: 1600 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDC640P

Typical Characteristics
12
10
15
12
8
6
4
2
0
9
6
3
0
0.5
Figure 3. On-Resistance Variation with
1.5
1.4
1.3
1.2
1.1
0.9
0.8
0.7
0
Figure 1. On-Region Characteristics.
1
V
-50
Figure 5. Transfer Characteristics.
DS
V
= -5V
GS
-3.5V
V
I
GS
D
= -4.5V
= -4.5 A
-25
= -4.5 V
0.5
1
-V
-V
GS
DS
, GATE TO SOURCE VOLTAGE (V)
T
0
, DRAIN-SOURCE VOLTAGE (V)
J
Temperature.
, JUNCTION TEMPERATURE (
-3.0V
1.5
1
25
-2.5V
50
T
A
1.5
2
= -55
75
o
C
-2.0V
125
100
o
2.5
C)
o
2
C
25
o
C
125
2.5
3
150
Figure 6. Body Diode Forward Voltage Variation
0.16
0.14
0.12
0.08
0.06
0.04
0.02
0.0001
0.1
0.001
0.01
2.5
1.5
0.5
Figure 2. On-Resistance Variation with
1.5
Figure 4. On-Resistance Variation with
0.1
with Source Current and Temperature.
10
3
2
1
1
0
0
Drain Current and Gate Voltage.
V
T
GS
V
A
GS
= 25
= 0V
2
= -2.0V
Gate-to-Source Voltage.
o
0.2
C
-V
-V
3
SD
GS
, BODY DIODE FORWARD VOLTAGE (V)
-2.5V
2.5
, GATE TO SOURCE VOLTAGE (V)
T
A
= 125
T
-I
0.4
A
D
= 125
, DRAIN CURRENT (A)
-3.0V
o
6
C
3
o
C
0.6
25
-3.5V
3.5
o
C
9
0.8
-4.0V
-55
4
o
C
I
D
12
FDC640P Rev E(W)
= -2.25 A
1
4.5
-4.5V
1.2
15
5