FDN360P Fairchild Semiconductor, FDN360P Datasheet - Page 3

MOSFET P-CH 30V 2A SSOT3

FDN360P

Manufacturer Part Number
FDN360P
Description
MOSFET P-CH 30V 2A SSOT3
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDN360P

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
80 mOhm @ 2A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
2A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
9nC @ 10V
Input Capacitance (ciss) @ Vds
298pF @ 15V
Power - Max
460mW
Mounting Type
Surface Mount
Package / Case
3-SSOT, SuperSOT-3
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.08 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
5 S
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
2 A
Power Dissipation
500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDN360PTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDN360P
Manufacturer:
Fairchild Semiconductor
Quantity:
74 459
Part Number:
FDN360P
Manufacturer:
FAIRCHILD
Quantity:
2 000
Part Number:
FDN360P
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Part Number:
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Quantity:
1 431
Part Number:
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0
Company:
Part Number:
FDN360P
Quantity:
6 000
Part Number:
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Quantity:
20 000
Part Number:
FDN360P-NL
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Typical Characteristics
15
12
10
9
6
3
0
8
6
4
2
0
Figure 3. On-Resistance Variation with
0
1.6
1.4
1.2
0.8
0.6
1
Figure 1. On-Region Characteristics.
1
V
Figure 5. Transfer Characteristics.
-50
GS
V
DS
= -10V
= -5.0V
V
I
GS
D
-25
= -2A
= -10V
1
V
-6.0V
-V
-V
2
DS
GS
, DRAIN TO SOURCE VOLTAGE (V)
T
, GATE TO SOURCE VOLTAGE (V)
0
Temperature.
-5.0V
J
, JUNCTION TEMPERATURE (
2
25
-4.5V
3
50
T
A
3
= -55
-4.0V
75
o
C
100
o
4
C)
-3.5V
4
125
o
C
125
25
-3.0V
o
C
150
5
5
Figure 6. Body Diode Forward Voltage Variation
0.25
0.15
0.05
0.0001
0.3
0.2
0.1
0.001
Figure 2. On-Resistance Variation with
Figure 4. On-Resistance Variation with
0.01
with Source Current and Temperature.
0.1
1.8
1.6
1.4
1.2
0.8
0.6
0.4
10
2
1
2
1
0
0
Drain Current and Gate Voltage.
V
GS
T
A
= 0V
V
= 25
Gate-to-Source Voltage.
GS
0.2
-V
= -3.5V
o
C
-V
SD
3
4
GS
, BODY DIODE FORWARD VOLTAGE (V)
, GATE TO SOURCE VOLTAGE (V)
T
-4.0V
A
T
= 125
-I
0.4
A
D
= 125
, DRAIN CURRENT (A)
-4.5V
o
6
C
o
C
6
-5.0V
0.6
25
o
C
9
-6.0V
0.8
-55
8
o
C
FDN360P Rev F1 (W)
-7.0V
12
I
1
D
= -1A
-10V
10
1.2
15

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