FDN360P Fairchild Semiconductor, FDN360P Datasheet

FDN360P

Manufacturer Part Number

FDN360P

Description

MOSFET P-CH 30V 2A SSOT3

Manufacturer

Fairchild Semiconductor

Series

PowerTrench®r

Datasheet

1.FDN360P.pdf (5 pages)

Specifications of FDN360P

Fet Type

MOSFET P-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

80 mOhm @ 2A, 10V

Drain To Source Voltage (vdss)

30V

Current - Continuous Drain (id) @ 25° C

Vgs(th) (max) @ Id

3V @ 250µA

Gate Charge (qg) @ Vgs

9nC @ 10V

Input Capacitance (ciss) @ Vds

298pF @ 15V

Power - Max

460mW

Mounting Type

Surface Mount

Package / Case

3-SSOT, SuperSOT-3

Configuration

Single

Transistor Polarity

P-Channel

Resistance Drain-source Rds (on)

0.08 Ohm @ 10 V

Forward Transconductance Gfs (max / Min)

5 S

Drain-source Breakdown Voltage

30 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

2 A

Power Dissipation

500 mW

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

FDN360PTR

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

FDN360P

Manufacturer:

Fairchild Semiconductor

Quantity:

74 459

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

FDN360P

Manufacturer:

FAIRCHILD

Quantity:

2 000

Company:

Meier Automation Equipment Co., Limited

Part Number:

FDN360P

Manufacturer:

FAIRCHILD/仙童

Quantity:

20 000

Company:

Euro Chip Distribution

Part Number:

FDN360P

Quantity:

1 431

Company:

Amily Shenzhen XNWY Technology Co., Ltd

Part Number:

FDN360P

Company:

H&T Electronics

Part Number:

FDN360P

Quantity:

6 000

Company:

Meier Automation Equipment Co., Limited

Part Number:

FDN360P 360

Manufacturer:

FAIRCHILD/仙童

Quantity:

20 000

Company:

Meier Automation Equipment Co., Limited

Part Number:

FDN360P-NL

Manufacturer:

FAIRCHILD/仙童

Quantity:

20 000

Current page: 1 of 5
Download datasheet (123Kb)

FDN360P

Single P-Channel, PowerTrench MOSFET

General Description

This P-Channel Logic Level MOSFET is produced

using Fairchild Semiconductor advanced Power Trench

process that has been especially tailored to minimize

the on-state resistance and yet maintain low gate

charge for superior switching performance.

These devices are well suited for low voltage and

battery powered applications where low in-line power

loss and fast switching are required.

2003 Fairchild Semiconductor Corporation

Absolute Maximum Ratings

Symbol

Thermal Characteristics

Package Marking and Ordering Information

DSS

GSS

, T

Device Marking

STG

SuperSOT -3

360

Drain-Source Voltage

Gate-Source Voltage

Drain Current

Power Dissipation for Single Operation

Operating and Storage Junction Temperature Range

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

– Continuous

– Pulsed

FDN360P

Device

Parameter

=25

C unless otherwise noted

Reel Size

7’’

(Note 1a)

(Note 1b)

(Note 1a)

(Note 1)

Features

–2 A, –30 V.

Low gate charge (6.2 nC typical)

High performance trench technology for extremely

High power version of industry Standard SOT-23

low R

package. Identical pin-out to SOT-23 with 30%

higher power handling capability.

DS(ON)

Tape width

DS(ON)

–55 to +150

8mm

Ratings

0.46

–30

–10

250

0.5

–2

= 80 m

= 125 m @ V

@ V

May 2003

= –10 V

FDN360P Rev F1 (W)

3000 units

= –4.5 V

Quantity

Units

C/W

Related parts for FDN360P

FDN360P Summary of contents

Page 1

... C unless otherwise noted A (Note 1a) (Note 1a) (Note 1b) (Note 1a) (Note 1) Reel Size Tape width 7’’ May 2003 –10 V DS(ON 125 –4.5 V DS(ON Ratings Units – –2 A –10 0.5 W 0.46 –55 to +150 C C/W 250 C/W 75 Quantity 8mm 3000 units FDN360P Rev F1 (W) ...

Page 2

... S is determined by the user's board design 270°C/W when mounted on a minimum pad. 2.0% Min Typ Max Units –30 V –22 mV/ C –1 –10 100 nA –100 nA –1 –1.9 – mV 136 100 125 – 298 6 1.2 nC –0.42 A –0.8 –1.2 V (Note 2) FDN360P Rev F1 (W) A ...

Page 3

... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature -3.5V GS -4.0V -4.5V -5.0V -6.0V -7.0V -10V DRAIN CURRENT ( - 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDN360P Rev F1 ( 1.2 ...

Page 4

... Figure 10. Single Pulse Maximum 0.01 0 TIME (sec MHz ISS C OSS DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 270°C 25°C A 0.01 0 100 t , TIME (sec) 1 Power Dissipation. R ( 270 °C/W JA P(pk Duty Cycle 100 FDN360P Rev F1 (W) 30 1000 JA ( 1000 ...

Page 5

CROSSVOLT â â â â â Rev. I2 ...

Related keywords

fdn36
fdn361
fdn361bn
fdn361an
fdn360p
fdn360
FDN360P datasheet
FDN360P data sheet
FDN360P pdf datasheet
FDN360P component
FDN360P part
FDN360P distributor
FDN360P RoHS
FDN360P datasheet download