FDV303N Fairchild Semiconductor, FDV303N Datasheet - Page 3

• Manufacturer Part Number: FDV303N
• Description: MOSFET N-CH 25V 680MA SOT-23
• Manufacturer: Fairchild Semiconductor

Specifications of FDV303N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 450 mOhm @ 500mA, 4.5V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 680mA
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 2.3nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 50pF @ 10V
• Power - Max: 350mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: MOSFET
• Voltage, Vds Typ: 25V
• Current, Id Cont: 0.68A
• Resistance, Rds On: 0.6ohm
• Voltage, Vgs Rds On Measurement: 4.5V
• Voltage, Vgs Th Typ: 0.8V
• Case Style: SOT-23
• Current, Idm Pulse: 2A
• Rohs Compliant: Yes
• Dc: 1212
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDV303NTR

Typical Electrical Characteristics
1.5
1.2
0.9
0.6
0.3
0.8
0.6
0.4
0.2
0
1
0
1.6
1.4
1.2
0.8
0.6
0
0
1
-50
Figure 5. Transfer Characteristics.
Figure 1. On-Region Characteristics.
V
V
Figure 3.
GS
V
DS
I =0.5 A
D
GS
2.7
-25
= 4.5V
3.0
= 5.0V
= 4.5 V
3.5
0.5
V
0.5
V
DS
GS
with Temperature.
, DRAIN-SOURCE VOLTAGE (V)
T , JUNCTION TEMPERATURE (°C)
0
, GATE TO SOURCE VOLTAGE (V)
J
On-Resistance Variation
2.5
25
1
1
50
2.0
T = -55°C
J
1.5
75
1.5
1.5
100
125°C
2
25°C
125
2
2.5
150
0.0001
0.001
0.01
Variation with Source Current and Temperature.
1.5
0.5
1.6
1.2
0.8
0.4
0.1
2
0
2
1
1
Figure 4.
1
0
0
V
Figure 6.
GS
Figure 2. On-Resistance Variation with
= 0V
1.5
V
Gate-To- Source Voltage.
Drain Current and Gate Voltage.
GS
0.2
0.2
V
SD
= 2.0V
On Resistance Variation with
, BODY DIODE FORWARD VOLTAGE (V)
V
2
GS
Body Diode Forward Voltage
, GATE TO SOURCE VOLTAGE (V)
0.4
0.4
I , DRAIN CURRENT (A)
T = 125°C
D
J
2.5
2.5
125°C
25°C
0.6
0.6
2.7
3
-55°C
25°C
3.0
3.5
0.8
0.8
3.5
4
1
4.5
1
FDV303N Rev.D1
ID= 0.5A
4.5
1.2
1.2
5