FDV303N Fairchild Semiconductor, FDV303N Datasheet - Page 2

• Manufacturer Part Number: FDV303N
• Description: MOSFET N-CH 25V 680MA SOT-23
• Manufacturer: Fairchild Semiconductor

Specifications of FDV303N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 450 mOhm @ 500mA, 4.5V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 680mA
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 2.3nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 50pF @ 10V
• Power - Max: 350mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: MOSFET
• Voltage, Vds Typ: 25V
• Current, Id Cont: 0.68A
• Resistance, Rds On: 0.6ohm
• Voltage, Vgs Rds On Measurement: 4.5V
• Voltage, Vgs Th Typ: 0.8V
• Case Style: SOT-23
• Current, Idm Pulse: 2A
• Rohs Compliant: Yes
• Dc: 1212
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDV303NTR

Electrical Characteristics
Symbol
OFF CHARACTERISTICS
BV
I
I
ON CHARACTERISTICS
V
R
I
g
DYNAMIC CHARACTERISTICS
C
C
C
SWITCHING CHARACTERISTICS
t
t
t
t
Q
Q
Q
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
V
DSS
GSS
D(ON)
D(on)
r
D(off)
f
S
Note:
Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
FS
BV
V
GS(th)
SD
DS(ON)
iss
oss
rss
g
gs
gd
DSS
GS(th)
DSS
/ T
/ T
J
J
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Zero Gate Voltage Drain Current
Gate - Body Leakage Current
Gate Threshold Voltage Temp. Coefficient
Gate Threshold Voltage
Static Drain-Source On-Resistance
On-State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
(Note)
(Note)
(T
A
= 25
O
C unless otherwise noted )
Conditions
V
I
V
V
I
V
V
V
V
V
V
V
V
V
V
V
D
D
f = 1.0 MHz
GS
DS
GS
DS
GS
GS
GS
DS
DS
DD
GS
DS
GS
GS
= 250 µA, Referenced to 25
= 250 µA, Referenced to 25
= 20 V, V
= V
= 5 V, I
= 10 V, V
= 5 V, I
= 0 V, I
= 8 V, V
= 4.5 V, I
= 2.7 V, I
= 2.7 V, V
= 6 V, I
= 4.5 V, R
= 4.5 V
= 0 V, I
GS
, I
D
D
D
D
D
S
= 0.5 A
DS
= 250 µA
= 250 µA
= 0.5 A,
= 0.5 A
D
D
GS
GS
= 0.5 A,
= 0 V
DS
GEN
= 0.5 A
= 0.2 A
= 0 V
= 0 V,
= 5 V
= 50
(Note)
T
T
o
o
C
C
J
J
= 55°C
=125°C
0.65
Min
0.5
25
Typ
0.33
0.52
0.44
1.45
1.64
0.38
0.45
0.83
-2.6
0.8
8.5
26
50
28
17
13
9
3
Max
0.45
100
1.5
0.8
0.6
2.3
0.3
1.2
10
18
30
25
1
6
FDV303N Rev.D1
mV /
mV /
Units
µA
µA
nA
nC
nC
nC
ns
ns
ns
ns
V
V
A
S
pF
pF
pF
A
V
o
o
C
C