BS270 Fairchild Semiconductor, BS270 Datasheet - Page 3

• Manufacturer Part Number: BS270
• Description: MOSFET N-CH 60V 400MA TO-92
• Manufacturer: Fairchild Semiconductor

Specifications of BS270

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 400mA
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Input Capacitance (ciss) @ Vds: 50pF @ 25V
• Power - Max: 625mW
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 0.32 S
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.4 A
• Power Dissipation: 625 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Typical Electrical Characteristics
1.6
1.2
0.8
0.4
2
0
1.5
0.5
1.75
1.25
0.75
0
1.5
0.5
2
1
0
Figure 3. On-Resistance Variation
Figure 5. Transfer Characteristics
2
1
0
Figure 1. On-Region Characteristics
-50
V
DS
with Temperature.
V
I
-25
= 10V
D
G S
= 5 0 0 m A
2
1
V
= 10V
GS
V
0
T , JUNCTION TEMPERATURE (°C)
DS
, GATE TO SOURCE VOLTAGE (V)
J
, DRAIN-SOURCE VOLTAGE (V)
V
GS
4
2 5
2
= 10V
T
5 0
J
= -55°C
6
9.0
3
7 5
8.0
.
7.0
100
25°C
.
8
4
6.0
5.0
125
125°C
4.0
3.0
150
1 0
5
1.05
0.95
0.85
2.5
1.5
0.5
1.1
0.9
0.8
2.5
1.5
0.5
3
2
1
0
Figure 4. On-Resistance Variation with Drain
Figure 6. Gate Threshold Variation with
Figure 2. On-Resistance Variation with Gate Voltage
1
3
2
1
-50
0
0
V
GS
Current and Temperature.
Temperature
V
and Drain Current.
=4.0V
-25
GS
= 10V
0.4
0.4
0
T , JUNCTION TEMPERATURE (°C)
4.5
J
T = 125°C
J
I , DRAIN CURRENT (A)
I
D
D
5.0
.
2 5
, DRAIN CURRENT (A)
0.8
0.8
25°C
5 0
-55°C
6 .0
1.2
1.2
7 5
1 0 0
I
V
D
7.0
DS
1.6
1.6
= 1 mA
= V
8.0
1 2 5
GS
9.0
1 0
BS270.SAM
1 5 0
2
2