BS270 Fairchild Semiconductor, BS270 Datasheet - Page 2

• Manufacturer Part Number: BS270
• Description: MOSFET N-CH 60V 400MA TO-92
• Manufacturer: Fairchild Semiconductor

Specifications of BS270

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 400mA
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Input Capacitance (ciss) @ Vds: 50pF @ 25V
• Power - Max: 625mW
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 0.32 S
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.4 A
• Power Dissipation: 625 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Note:
Electrical Characteristics
Symbol
OFF CHARACTERISTICS
BV
I
I
I
ON CHARACTERISTICS
V
R
V
I
g
DYNAMIC CHARACTERISTICS
C
C
C
SWITCHING CHARACTERISTICS
t
t
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
I
V
1. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
DSS
GSSF
GSSF
D(ON)
on
off
S
SM
FS
GS(th)
DS(ON)
SD
DS(ON)
iss
oss
rss
DSS
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
Gate Threshold Voltage
Static Drain-Source On-Resistance
Drain-Source On-Voltage
On-State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
(Note 1)
(Note 1)
(T
A
= 25°C unless otherwise noted)
Conditions
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
f = 1.0 MHz
GS
DS
GS
GS
DS
GS
GS
GS
GS
GS
GS
DS
DS
DD
GS
GS
= 0 V, I
= 0 V, I
= 60 V, V
= 20 V, V
= -20 V, V
= V
= 10 V, I
= 4.5 V, I
= 10 V, I
= 4.5 V, I
= 10 V, V
= 4.5 V, V
> 2 V
= 25 V, V
= 30 V, I
= 10 V, R
GS
, I
DS(on)
S
D
D
= 10 µA
D
= 400 mA
= 250 µA
D
D
D
GS
DS
GEN
D
, I
GS
= 500 mA
DS
DS
= 75 mA
= 500 mA
DS
= 75 mA
= 500 m A,
= 0 V
D
= 0 V
> 2 V
= 0 V
= 0 V,
> 2 V
= 200 mA
= 25
DS(on)
(Note 1)
DS(on)
T
T
J
J
= 125
= 125
o
o
C
C
2000
Min
400
100
60
1
2700
0.14
0.88
Typ
600
320
2.1
1.2
1.8
0.6
20
11
2
4
0.225
Max
2000
500
400
-10
2.5
3.5
1.2
10
50
25
10
10
1
2
3
1
5
BS270.SAM
Units
mA
mS
mA
mA
µA
µA
nA
nA
pF
pF
ns
ns
V
V
V
pF
V