BS270 Fairchild Semiconductor, BS270 Datasheet - Page 2
![MOSFET N-CH 60V 400MA TO-92](/photos/5/41/54198/to-92_pkg_sml.jpg)
BS270
Manufacturer Part Number
BS270
Description
MOSFET N-CH 60V 400MA TO-92
Manufacturer
Fairchild Semiconductor
Datasheet
1.BS270.pdf
(10 pages)
Specifications of BS270
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
2 Ohm @ 500mA, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
400mA
Vgs(th) (max) @ Id
2.5V @ 250µA
Input Capacitance (ciss) @ Vds
50pF @ 25V
Power - Max
625mW
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
2 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
0.32 S
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.4 A
Power Dissipation
625 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BS270
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
BS270_D74Z
Manufacturer:
Fairchild Semiconductor
Quantity:
40 035
Note:
Electrical Characteristics
Symbol
OFF CHARACTERISTICS
BV
I
I
I
ON CHARACTERISTICS
V
R
V
I
g
DYNAMIC CHARACTERISTICS
C
C
C
SWITCHING CHARACTERISTICS
t
t
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
I
V
1. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
DSS
GSSF
GSSF
D(ON)
on
off
S
SM
FS
GS(th)
DS(ON)
SD
DS(ON)
iss
oss
rss
DSS
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
Gate Threshold Voltage
Static Drain-Source On-Resistance
Drain-Source On-Voltage
On-State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
(Note 1)
(Note 1)
(T
A
= 25°C unless otherwise noted)
Conditions
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
f = 1.0 MHz
GS
DS
GS
GS
DS
GS
GS
GS
GS
GS
GS
DS
DS
DD
GS
GS
= 0 V, I
= 0 V, I
= 60 V, V
= 20 V, V
= -20 V, V
= V
= 10 V, I
= 4.5 V, I
= 10 V, I
= 4.5 V, I
= 10 V, V
= 4.5 V, V
> 2 V
= 25 V, V
= 30 V, I
= 10 V, R
GS
, I
DS(on)
S
D
D
= 10 µA
D
= 400 mA
= 250 µA
D
D
D
GS
DS
GEN
D
, I
GS
= 500 mA
DS
DS
= 75 mA
= 500 mA
DS
= 75 mA
= 500 m A,
= 0 V
D
= 0 V
> 2 V
= 0 V
= 0 V,
> 2 V
= 200 mA
= 25
DS(on)
(Note 1)
DS(on)
T
T
J
J
= 125
= 125
o
o
C
C
2000
Min
400
100
60
1
2700
0.14
0.88
Typ
600
320
2.1
1.2
1.8
0.6
20
11
2
4
0.225
Max
2000
500
400
-10
2.5
3.5
1.2
10
50
25
10
10
1
2
3
1
5
BS270.SAM
Units
mA
mS
mA
mA
µA
µA
nA
nA
pF
pF
ns
ns
V
V
V
pF
V