FDV301N Fairchild Semiconductor, FDV301N Datasheet - Page 5

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FDV301N

Manufacturer Part Number
FDV301N
Description
MOSFET N-CH 25V 220MA SOT-23
Manufacturer
Fairchild Semiconductor
Type
Power MOSFETr
Datasheet

Specifications of FDV301N

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
4 Ohm @ 400mA, 4.5V
Drain To Source Voltage (vdss)
25V
Current - Continuous Drain (id) @ 25° C
220mA
Vgs(th) (max) @ Id
1.06V @ 250µA
Gate Charge (qg) @ Vgs
0.7nC @ 4.5V
Input Capacitance (ciss) @ Vds
9.5pF @ 10V
Power - Max
350mW
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
4Ohm
Drain-source On-volt
25V
Gate-source Voltage (max)
8V
Drain Current (max)
500mA
Power Dissipation
350mW
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
SOT-23
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
4 Ohm @ 4.5 V
Forward Transconductance Gfs (max / Min)
0.2 S
Drain-source Breakdown Voltage
25 V
Gate-source Breakdown Voltage
8 V
Continuous Drain Current
0.5 A
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDV301NTR

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©2009 Fairchild Semiconductor Corporation
FDV301N Rev.F1
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2.
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