FDV301N Fairchild Semiconductor, FDV301N Datasheet - Page 2

• Manufacturer Part Number: FDV301N
• Description: MOSFET N-CH 25V 220MA SOT-23
• Manufacturer: Fairchild Semiconductor
• Type: Power MOSFETr

Specifications of FDV301N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4 Ohm @ 400mA, 4.5V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 220mA
• Vgs(th) (max) @ Id: 1.06V @ 250µA
• Gate Charge (qg) @ Vgs: 0.7nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 9.5pF @ 10V
• Power - Max: 350mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 4Ohm
• Drain-source On-volt: 25V
• Gate-source Voltage (max): 8V
• Drain Current (max): 500mA
• Power Dissipation: 350mW
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SOT-23
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 4 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 0.2 S
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: 8 V
• Continuous Drain Current: 0.5 A
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDV301NTR

Inverter Electrical Characteristics
Symbol
I
V
V
R
Electrical Characteristics
Symbol
OFF CHARACTERISTICS
BV
I
I
ON CHARACTERISTICS
V
R
I
g
DYNAMIC CHARACTERISTICS
C
C
C
SWITCHING CHARACTERISTICS
t
t
t
t
Q
Q
Q
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
V
O (off)
DSS
GSS
D(ON)
D(on)
r
D(off)
f
S
Note:
Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
FS
I (off)
I (on)
O (on)
BV
V
GS(th)
DS(ON)
iss
oss
rss
SD
g
gs
gd
DSS
GS(th)
DSS
/ T
/ T
J
J
Parameter
Zero Input Voltage Output Current
Input Voltage
Output to Ground Resistance
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Zero Gate Voltage Drain Current
Gate - Body Leakage Current
Gate Threshold Voltage Temp. Coefficient
Gate Threshold Voltage
Static Drain-Source On-Resistance
On-State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
(Note)
(Note)
(T
A
= 25
O
(T
C unless otherwise noted )
A
= 25°C unless otherwise noted)
Conditions
V
V
V
V
Conditions
V
I
V
V
I
V
V
V
V
V
V
V
V
V
V
V
D
D
f = 1.0 MHz
CC
CC
O
I
GS
DS
GS
DS
GS
GS
GS
DS
DS
DD
GS
DS
GS
GS
= 250 µA, Referenced to 25
= 250 µA, Referenced to 25
= 2.7 V, I
= 0.3 V, I
= 20 V, V
= V
= 5 V, I
= 10 V, V
= 5 V, I
= 20 V, V
= 5 V, I
= 0 V, I
= 8 V, V
= 2.7 V, I
= 4.5 V, I
= 2.7 V, V
= 6 V, I
= 4.5 V, R
= 4.5 V
= 0 V, I
GS
, I
O
D
D
D
D
D
S
O
O
= 0.4 A
DS
= 0.29 A
= 250 µA
= 250 µA
= 0.2 A,
= 10 µA
= 0.2 A
D
D
= 0.005 A
I
GS
GS
= 0.5 A,
= 0 V
= 0 V
DS
GEN
= 0.2 A
= 0.4 A
= 0 V
= 0 V,
= 5 V
= 50
(Note)
T
T
o
o
J
J
C
C
= 55°C
=125°C
Min
0.70
Min
0.2
25
1
0.85
0.49
0.22
0.07
Typ
Typ
-2.1
3.8
6.3
3.1
0.2
9.5
1.3
3.2
3.5
3.5
0.8
25
4
6
6
Max
Max
0.29
1.06
100
0.5
0.7
1.2
10
15
1
5
1
5
9
4
8
8
8
FDV301N Rev.F1
mV /
mV /
Units
Units
µA
µA
µA
nA
nC
nC
nC
ns
ns
ns
ns
V
V
V
V
A
S
pF
pF
pF
A
V
o
o
C
C