FDMC5614P Fairchild Semiconductor, FDMC5614P Datasheet - Page 4

• Manufacturer Part Number: FDMC5614P
• Description: MOSFET P-CH 60V 5.7A POWER33
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDMC5614P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 100 mOhm @ 5.7A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 5.7A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 10V
• Input Capacitance (ciss) @ Vds: 1055pF @ 30V
• Power - Max: 2.1W
• Mounting Type: Surface Mount
• Package / Case: 8-MLP, Power33
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.084 Ohms
• Drain-source Breakdown Voltage: - 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 13.5 A
• Power Dissipation: 2.1 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDMC5614PTR

FDMC5614P Rev.C1
Typical Characteristics
10
Figure 7.
1000
8
6
4
2
0
8
7
6
5
4
3
2
1
0.01
100
0.5
0
10
1
10
Figure 9.
I
D
-4
= -5.7A
Switching Capability
SINGLE PULSE
R
θ
Gate Charge Characteristics
JA
0.1
t
4
AV
Unclamped Inductive
= 135
Q
, TIME IN AVALANCHE(ms)
g
, GATE CHARGE(nC)
T
o
10
J
C/W
= 125
V
-3
GS
Figure 11.
V
o
= -10V
8
C
DD
1
V
DD
T
= -20V
J
= -40V
= 25°C unless otherwise noted
T
J
= 25
10
V
DD
-2
12
10
o
Single Pulse Maximum Power Dissipation
C
= -30V
t, PULSE WIDTH (s)
100
16
10
-1
4
2000
1E-3
1000
0.01
10
100
0.1
10
60
10
0
1
0.1
0.1
Figure 8.
SINGLE PULSE
T
R
T
r
f = 1MHz
V
DS(on)
J
A
Figure 10.
θ
GS
JA
=
=
MAX RATED
25
= 135
= 0V
-V
-V
o
LIMITED
C
DS
DS
to Source Voltage
o
10
C/W
, DRAIN TO SOURCE VOLTAGE (V)
, DRAIN-SOURCE VOLTAGE (V)
Operating Area
Capacitance vs Drain
1
1
Forward Bias Safe
1
T
FOR TEMPERATURES
ABOVE 25
CURRENT AS FOLLOWS:
A
I = I
= 25
25
o
C
10
o
C DERATE PEAK
150 T A
----------------------- -
10
2
125
–
C
C
C
10
oss
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iss
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100ms
100us
1ms
10ms
1s
10s
DC
10
100
3
200
60