FDZ371PZ Fairchild Semiconductor, FDZ371PZ Datasheet - Page 4

• Manufacturer Part Number: FDZ371PZ
• Description: MOSFET P-CH 20V 3.7A WLCSP
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDZ371PZ

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 75 mOhm @ 2A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3.7A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1000pF @ 10V
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Package / Case: 4-WLCSP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDZ371PZTR

©2009 Fairchild Semiconductor Corporation
FDZ371PZ Rev.C
Typical Characteristics
0.01
0.1
20
10
1
4.5
3.0
1.5
0.0
0.1
Figure 7.
200
100
0.1
THIS AREA IS
LIMITED BY r
10
0
SINGLE PULSE
T
R
T
10
1
J
A
θ
JA
= MAX RATED
= 25
-4
I
Figure 9.
D
= 260
= -3.3 A
o
-V
C
DS
o
3
Gate Charge Characteristics
C/W
, DRAIN to SOURCE VOLTAGE (V)
ds(on)
Operating Area
Q
Forward Bias Safe
1
g
, GATE CHARGE (nC)
10
-3
6
V
DD
= -8 V
Figure 11. Single Pulse Maximum Power Dissipation
V
DD
T
= -12 V
J
9
V
= 25 °C unless otherwise noted
DD
10
10
= -10 V
-2
12
100 us
10 ms
1 ms
100 ms
1 s
10 s
DC
t, PULSE WIDTH (s)
60
15
10
-1
4
2000
1000
100
10
10
10
10
10
10
10
10
1
50
-2
-3
-4
-5
-6
-7
-8
-9
0.1
Figure 10.
0
Figure 8.
V
f = 1 MHz
V
GS
DS
= 0 V
= 0 V
Gate to Source Voltage
-V
-V
3
DS
to Source Voltage
GS ,
Capacitance vs Drain
, DRAIN TO SOURCE VOLTAGE (V)
Gate Leakage Current vs
10
T
GATE TO SOURCE VOLTAGE (V)
J
= 125
6
o
1
C
SINGLE PULSE
R
T
A
θ
JA
= 25
= 260
T
100
J
o
9
= 25
C
o
C/W
o
C
C
C
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12
C
oss
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iss
10
1000
20
15