FDZ371PZ Fairchild Semiconductor, FDZ371PZ Datasheet

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FDZ371PZ

Manufacturer Part Number
FDZ371PZ
Description
MOSFET P-CH 20V 3.7A WLCSP
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDZ371PZ

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
75 mOhm @ 2A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
3.7A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
17nC @ 4.5V
Input Capacitance (ciss) @ Vds
1000pF @ 10V
Power - Max
500mW
Mounting Type
Surface Mount
Package / Case
4-WLCSP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDZ371PZTR
©2009 Fairchild Semiconductor Corporation
FDZ371PZ Rev.C
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
FDZ371PZ
P-Channel 1.5 V Specified PowerTrench
-20 V, -3.7 A, 75 mΩ
Features
V
V
I
P
T
R
R
D
J
DS
GS
D
θJA
θJA
Max r
Max r
Max r
Max r
Occupies only 1.0 mm
area of 2 x 2 BGA
Ultra-thin package: less than 0.4 mm height when mounted to
PCB
HBM ESD protection level >4.4kV typical (Note 3)
RoHS Compliant
, T
Symbol
Device Marking
STG
DS(on)
DS(on)
DS(on)
DS(on)
K
= 75 mΩ at V
= 90 mΩ at V
= 110 mΩ at V
= 150 mΩ at V
D
Drain to Source Voltage
Gate to Source Voltage
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
BOTTOM
S
2
of PCB area.Less than 30% of the
GS
GS
G
GS
GS
FDZ371PZ
= -4.5 V, I
= -2.5 V, I
= -1.8 V, I
-Continuous
= -1.5 V, I
-Pulsed
Device
S
WL-CSP 1.0X1.0 Thin
Pin 1
D
D
D
D
= -2.0 A
= -1.5 A
= -1.0 A
= -1.0 A
T
A
= 25 °C unless otherwise noted
WL-CSP 1.0X1.0 Thin
Pin 1
Parameter
Package
1
T
T
T
General Description
Designed on Fairchild's advanced 1.5 V PowerTrench
with state of the art "fine pitch" Thin WLCSP packaging process,
the FDZ371PZ minimizes both PCB space and r
advanced WLCSP MOSFET embodies a breakthrough in
packaging technology which enables the device to combine
excellent thermal transfer characteristics, ultra-low profile
packaging, low gate charge, and low r
Applications
A
A
A
TOP
= 25°C
= 25°C
= 25°C
Battery management
Load switch
Battery protection
®
Thin WL-CSP MOSFET
Reel Size
7 ”
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1b)
Tape Width
8 mm
-55 to +150
Ratings
DS(on)
-3.7
260
-20
-12
1.7
0.5
±8
75
.
November 2009
www.fairchildsemi.com
5000 units
Quantity
DS(on)
®
process
Units
°C/W
. This
°C
W
V
V
A

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FDZ371PZ Summary of contents

Page 1

... General Description = -2.0 A Designed on Fairchild's advanced 1.5 V PowerTrench D with state of the art "fine pitch" Thin WLCSP packaging process the FDZ371PZ minimizes both PCB space and r = -1.0 A advanced WLCSP MOSFET embodies a breakthrough in D packaging technology which enables the device to combine = -1 excellent thermal transfer characteristics, ultra-low profile ...

Page 2

... Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%. 3. The diode connected between the gate and source serves only as protection ESD. No gate overvoltage rating is implied. ©2009 Fairchild Semiconductor Corporation FDZ371PZ Rev °C unless otherwise noted J Test Conditions = -250 µ ...

Page 3

... Figure 3. Normalized On- Resistance vs Junction Temperature 12 µ PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 150 0.5 1 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2009 Fairchild Semiconductor Corporation FDZ371PZ Rev °C unless otherwise noted -2.5 V µ s 1.5 2.0 2 100 125 150 0. - 0.001 1.5 2 ...

Page 4

... R = 260 C/W θ 0.01 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 9. Forward Bias Safe Operating Area 200 100 Figure 11. Single Pulse Maximum Power Dissipation ©2009 Fairchild Semiconductor Corporation FDZ371PZ Rev °C unless otherwise noted J 2000 1000 100 100 PULSE WIDTH (s) 4 100 ...

Page 5

... Typical Characteristics 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.1 0.01 0.001 - Figure 12. Junction-to-Ambient Transient Thermal Response Curve ©2009 Fairchild Semiconductor Corporation FDZ371PZ Rev °C unless otherwise noted J SINGLE PULSE 260 C/W θ RECTANGULAR PULSE DURATION (sec NOTES: DUTY FACTOR ...

Page 6

... Dimensional Outline and Pad Layout ©2009 Fairchild Semiconductor Corporation FDZ371PZ Rev.C 6 www.fairchildsemi.com ...

Page 7

... Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2009 Fairchild Semiconductor Corporation FDZ371PZ Rev.C F-PFS™ PowerTrench ® FRFET PowerXS™ SM Global Power Resource Programmable Active Droop™ ® Green FPS™ ...

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