FDZ193P Fairchild Semiconductor, FDZ193P Datasheet - Page 5
![MOSFET P-CH 20V 3A 8-WLCSP](/photos/5/52/55240/fdz193p_sml.jpg)
FDZ193P
Manufacturer Part Number
FDZ193P
Description
MOSFET P-CH 20V 3A 8-WLCSP
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDZ193P.pdf
(7 pages)
Specifications of FDZ193P
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
90 mOhm @ 1A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
3A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
10nC @ 10V
Input Capacitance (ciss) @ Vds
660pF @ 10V
Power - Max
900mW
Mounting Type
Surface Mount
Package / Case
6-WLCSP
Configuration
Single Dual Drain Triple Source
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.09 Ohm @ 4.5 V
Forward Transconductance Gfs (max / Min)
5.6 S
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
3 A
Power Dissipation
1900 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDZ193PTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDZ193P
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
FDZ193P Rev.C2 (W)
Typical Characteristics
0.01
0.1
2
1
10
-3
D = 0.5
DUTY CYCLE-DESCENDING ORDER
SINGLE PULSE
0.2
0.1
0.05
0.02
0.01
10
-2
T
Figure 12. Transient Thermal Response Curve
J
= 25°C unless otherwise noted
10
t, RECTANGULAR PULSE DURATION (s)
-1
5
10
0
10
1
NOTES:
DUTY FACTOR: D = t
PEAK T
J
= P
DM
x Z
P
JA
DM
10
1
/t
x R
2
2
JA
t
1
+ T
t
2
A
www.fairchildsemi.com
10
3