FDZ193P Fairchild Semiconductor, FDZ193P Datasheet - Page 3

• Manufacturer Part Number: FDZ193P
• Description: MOSFET P-CH 20V 3A 8-WLCSP
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDZ193P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 90 mOhm @ 1A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 10nC @ 10V
• Input Capacitance (ciss) @ Vds: 660pF @ 10V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 6-WLCSP
• Configuration: Single Dual Drain Triple Source
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.09 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 5.6 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 3 A
• Power Dissipation: 1900 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDZ193PTR

FDZ193P Rev.C2 (W)
Typical Characteristics
16
14
12
10
16
14
12
10
1.4
1.3
1.2
1.1
1.0
0.9
0.8
Figure 3. Normalized On Resistance
0.0
0.0
8
6
4
2
0
8
6
4
2
0
Figure 1. On Region Characteristics
-50
Figure 5. Transfer Characteristics
V
GS
V
PULSE DURATION = 300 s
DUTY CYCLE = 2.0%MAX
DD
V
0.5
I
D
-25
GS
= -4.5V
vs Junction Temperature
0.5
= -1A
= -5V
-V
-V
= -4.5V
T
DS
GS
J
, JUNCTION TEMPERATURE
1.0
, DRAIN TO SOURCE VOLTAGE (V)
, GATE TO SOURCE VOLTAGE (V)
0
1.0
1.5
25
V
V
GS
GS
T
= -3V
= -3.5V
2.0
1.5
J
50
= 125
PULSE DURATION = 300 s
DUTY CYCLE = 2.0%MAX
T
o
J
2.5
C
75
= 25°C unless otherwise noted
2.0
T
J
= -55
3.0
T
100
V
J
V
V
GS
GS
(
= 25
GS
o
o
C
2.5
C
= -2.5V
= -2V
)
= -1.7V
3.5
o
125
C
4.0
3.0
150
3
1E-3
1E-4
0.01
0.1
240
200
160
120
10
2.0
1.8
1.6
1.4
1.2
1.0
0.8
80
40
1
0.2
Figure 2. Normalized On-Resistance
1.5
Figure 4. On-Resistance vs Gate to
Forward Voltage vs Source Current
0
vs Drain Current and Gate Voltage
Figure 6. Source to Drain Diode
V
V
GS
T
SD
V
2.0
J
2
-V
GS
= 0V
, BODY DIODE FORWARD VOLTAGE (V)
= 125
GS
0.4
= -2V
I
, GATE TO SOURCE VOLTAGE (V)
-I
D
o
D
Source Voltage
= -1A
4
T
C
2.5
, DRAIN CURRENT(A)
J
= 25
o
0.6
6
C
3.0
PULSE DURATION = 300 s
DUTY CYCLE = 2.0%MAX
T
J
PULSE DURATION = 300 s
DUTY CYCLE = 2.0%MAX
V
8
T
= -55
T
GS
J
J
3.5
= 25
= 125
= -2.5V
0.8
o
C
10
o
C
o
C
4.0
12
1.0
V
V
V
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GS
GS
GS
4.5
= -3V
= -3.5V
= -4.5V
14
1.2
5.0
16