FDN335N Fairchild Semiconductor, FDN335N Datasheet - Page 4

• Manufacturer Part Number: FDN335N
• Description: MOSFET N-CH 20V 1.7A SSOT3
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDN335N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 70 mOhm @ 1.7A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 1.7A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 5nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 310pF @ 10V
• Power - Max: 460mW
• Mounting Type: Surface Mount
• Package / Case: 3-SSOT, SuperSOT-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.07 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 7 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 1.7 A
• Power Dissipation: 500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDN335NTR

Typical Characteristics
0.01
5
4
3
2
1
0
0.1
10
Figure 9. Maximum Safe Operating Area.
0
1
Figure 7. Gate Charge Characteristics.
0.1
R
I
D
DS(ON)
= 1.7A
SINGLE PULSE
0.005
0.002
0.001
R
0.05
0.02
0.01
0.5
V
JA
0.5
0.2
0.1
T
0.0001
LIMIT
GS
1
A
= 270
= 25
= 4.5V
D = 0.5
o
o
1
C
C/W
V
DS
0.2
, DRAIN-SOURCE VOLTAGE (V)
0.1
Q
1
0.05
g
1.5
, GATE CHARGE (nC)
0.02
0.01
DC
0.001
10s
Single Pulse
1s
2
100ms
10ms
Figure 11. Transient Thermal Response Curve.
V
DS
2.5
= 5V
1ms
10
(continued)
Thermal characterization performed using the conditions described in Note 1b.
Transient themal response will change depending on the circuit board design.
3
15V
0.01
10V
3.5
100
4
0.1
t , TIME (sec)
1
20
16
12
0.0001
500
400
300
200
100
8
4
0
0
Figure 8. Capacitance Characteristics.
0
Figure 10. Single Pulse Maximum
0.001
1
4
Power Dissipation.
V
0.01
DS
SINGLE PULSE TIME (SEC)
, DRAIN TO SOURCE VOLTAGE (V)
C
C
C
0.1
OSS
RSS
8
ISS
P(pk)
10
T - T
R
Duty Cycle, D = t /t
J
R
JA
1
t
JA
1
A
(t) = r(t) * R
12
t
= P * R
2
= 270 °C/W
SINGLE PULSE
R
10
JA
T
=270
A
JA
=25
100
1
JA
(t)
2
o
o
16
C/W
C
100
V
f = 1MHz
GS
FDN335N Rev. C
300
= 0 V
1000
20