FDN335N Fairchild Semiconductor, FDN335N Datasheet - Page 2

• Manufacturer Part Number: FDN335N
• Description: MOSFET N-CH 20V 1.7A SSOT3
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDN335N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 70 mOhm @ 1.7A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 1.7A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 5nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 310pF @ 10V
• Power - Max: 460mW
• Mounting Type: Surface Mount
• Package / Case: 3-SSOT, SuperSOT-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.07 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 7 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 1.7 A
• Power Dissipation: 500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDN335NTR

Notes:
2: Pulse Test: Pulse Width
Electrical Characteristics
Off Characteristics
BV
I
I
I
On Characteristics
V
R
I
g
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
Drain-Source Diode Characteristics and Maximum Ratings
I
V
1: R
Symbol
surface of the drain pins. R
DSS
GSSF
GSSR
D(on)
d(on)
r
d(off)
f
S
Scale 1 : 1 on letter size paper
FS
BV
V
GS(th)
SD
DS(ON)
iss
oss
rss
g
gs
gd
DSS
GS(th)
T
T
JA
DSS
J
J
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting
a) 250 C/W when
mounted on a 0.02 in
Pad of 2 oz. Cu.
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current,
Forward
Gate-Body Leakage Current,
Reverse
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
On-State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward
Voltage
JC
is guaranteed by design while R
300 s, Duty Cycle
Parameter
(Note 2)
2
(Note 2)
2.0%
CA
b) 270 C/W when mounted
T
is determined by the user's board design.
A
= 25°C unless otherwise noted
on a minimum pad.
Test Conditions
V
I
V
V
V
V
I
V
V
V
V
V
V
f = 1.0 MHz
V
V
V
V
V
D
D
GS
DS
GS
GS
DS
GS
GS
GS
GS
DS
DS
DD
GS
DS
GS
GS
= 250 A,Referenced to 25 C
= 250 A,Referenced to 25 C
= 0 V, I
= 16 V, V
= 8 V, V
= -8 V, V
= V
= 4.5 V, I
= 4.5 V, I
= 2.5 V, I
= 4.5 V, V
= 5 V, I
= 10 V, V
= 10 V, I
= 4.5 V, R
= 10 V, I
= 4.5 V,
= 0 V, I
GS
, I
D
D
S
D
DS
D
D
= 250 A
DS
= 250 A
= 1.5 A
= 0.42 A
GS
D
D
D
GS
DS
= 1 A,
GEN
= 1.7 A,
= 0 V
= 1.7 A
= 1.7 A,T
= 1.5 A
= 0 V
= 0 V
= 0 V,
= 5 V
= 6
J
= 125 C
(Note 2)
Min Typ
0.4
20
8
0.055
0.079
0.078
0.55
0.95
310
0.9
8.5
3.5
0.7
14
80
40
11
-3
7
5
3
Max
0.070
0.120
0.100
-100
0.42
100
1.5
1.2
15
20
10
17
1
5
FDN335N Rev. C
Units
mV/ C
mV/ C
nA
nA
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
V
A
S
A
V
A