STN1N20 STMicroelectronics, STN1N20 Datasheet - Page 8

MOSFET N-CH 200V 1A SOT223

STN1N20

Manufacturer Part Number
STN1N20
Description
MOSFET N-CH 200V 1A SOT223
Manufacturer
STMicroelectronics
Datasheets

Specifications of STN1N20

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
1.5 Ohm @ 500mA, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
1A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
15.7nC @ 10V
Input Capacitance (ciss) @ Vds
206pF @ 25V
Power - Max
2.9W
Mounting Type
Surface Mount
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Configuration
Single Dual Drain
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.5 Ohms
Forward Transconductance Gfs (max / Min)
0.7 S
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
1 A
Power Dissipation
2.9 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Continuous Drain Current Id
1A
Drain Source Voltage Vds
200V
On Resistance Rds(on)
1.5ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
3V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-3176-2

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STN1N20
Manufacturer:
ST
Quantity:
450
Part Number:
STN1N20
Manufacturer:
ST MICROELECTRONICS
Quantity:
30 000
Part Number:
STN1N20
Manufacturer:
ST
0
Part Number:
STN1N20
Manufacturer:
ST
Quantity:
256
Part Number:
STN1N20-TR
Manufacturer:
ST
0
Test circuits
3
8/12
Figure 13. Switching times test circuit for
Figure 15. Test circuit for inductive load
Figure 17. Unclamped inductive waveform
25 Ω
P
V
W
DD
G
V
D
S
GS
D.U.T.
A
B
Test circuits
resistive load
switching and diode recovery times
I
D
V
R
D
G
R
G
FAST
DIODE
B
A
I
DM
V
G
A
B
D
R
D.U.T.
L
S
D
L=100µH
V
2200
µF
(BR)DSS
3.3
µF
3.3
µF
1000
µF
AM01468v1
AM01472v1
AM01470v1
V
DD
V
DD
V
DD
Figure 14. Gate charge test circuit
Figure 16. Unclamped inductive load test
Figure 18. Switching time waveform
V
P
i
V
W
0
0
i
=20V=V
P
w
10%
2200
µF
1kΩ
GMAX
td
circuit
on
I
90%
V
t
D
on
D
I
G
2.7kΩ
12V
t
=CONST
r
47kΩ
10%
V
GS
L
D.U.T.
V
47kΩ
100Ω
DS
2200
µF
100nF
90%
td
off
t
off
3.3
µF
D.U.T.
STN1N20
t
f
10%
AM01469v1
AM01471v1
AM01473v1
1kΩ
90%
V
V
V
G
DD
DD

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