STN1N20 STMicroelectronics, STN1N20 Datasheet
STN1N20
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STN1N20 Summary of contents
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... Table 1. Device summary Order codes STN1N20 April 2009 N-channel 200 V, 1.2 Ω SOT-223 MESH OVERLAY™ Power MOSFET max I D < 1.5 Ω Figure 1. Marking N1N20 Rev 2 STN1N20 SOT-223 Internal schematic diagram Package Packaging SOT-223 Tape and reel 1/12 www.st.com 12 ...
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... Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/ STN1N20 ...
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... STN1N20 1 Electrical ratings Table 2. Absolute maximum ratings Symbol V Drain-source voltage ( Gate-source voltage GS I Drain current (continuous Drain current (continuous (1) I Drain current (pulsed Total dissipation at T TOT Derating factor dv/dt Peak diode recovery voltage slope T Operating junction temperature j T Storage temperature stg 1 ...
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... Figure 14) (see Test conditions V = 160 4.7 Ω Figure 13) (see Min. Typ 200 GS =125 ° 250 µ 0.5 A 1.2 Min. Typ. , DS(on)max 2.7 206 2.8 4 Min. Typ STN1N20 Max. Unit V 1 µA 100 µA ±100 Ω 1.5 Max. Unit 15 Max Unit ...
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... STN1N20 Table 8. Source drain diode Symbol I Source-drain current SD (1) I Source-drain current (pulsed) SDM (2) V Forward on voltage SD t Reverse recovery time rr Q Reverse recovery charge rr I Reverse recovery current RRM 1. Pulse width limited by safe operating area 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% ...
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... Electrical characteristics 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 4. Output characteristics Figure 6. Transconductance 6/12 Figure 3. Thermal impedance Figure 5. Transfer characteristics Figure 7. Static drain-source on resistance STN1N20 ...
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... STN1N20 Figure 8. Gate charge vs gate-source voltage Figure 9. Figure 10. Normalized gate threshold voltage vs temperature Figure 12. Source-drain diode forward characteristics Electrical characteristics Capacitance variations Figure 11. Normalized on resistance vs temperature 7/12 ...
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... Figure 18. Switching time waveform V (BR)DSS 10% 0 AM01472v1 12V 47kΩ 100nF I =CONST G 100Ω GMAX 2200 µF 2.7kΩ 47kΩ 1kΩ circuit 2200 3.3 µ D.U. off off td on 90 STN1N20 V DD 1kΩ D.U. AM01469v1 V µF DD AM01471v1 t f 90% 10% AM01473v1 ...
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... STN1N20 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK trademark. Package mechanical data ® 9/12 ...
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... Package mechanical data DIM 10/12 SOT-223 mechanical data mm. min. typ 0.02 0.60 0.70 2.90 3.00 0.24 0.26 6.30 6.50 2.30 4.60 3.30 3.50 6.70 7.00 STN1N20 max. 1.80 0.1 0.85 3.15 0.35 6.70 3.70 7. 0046067_L ...
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... STN1N20 5 Revision history Table 9. Document revision history Date 21-Jun-2004 31-Mar-2009 Revision 1 First release. 2 Document status promoted from preliminary data to datasheet. Revision history Changes 11/12 ...
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... Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 12/12 Please Read Carefully: © 2009 STMicroelectronics - All rights reserved STMicroelectronics group of companies www.st.com STN1N20 ...