STN1N20 STMicroelectronics, STN1N20 Datasheet - Page 4

• Manufacturer Part Number: STN1N20
• Description: MOSFET N-CH 200V 1A SOT223
• Manufacturer: STMicroelectronics

Specifications of STN1N20

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.5 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 1A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 15.7nC @ 10V
• Input Capacitance (ciss) @ Vds: 206pF @ 25V
• Power - Max: 2.9W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Configuration: Single Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.5 Ohms
• Forward Transconductance Gfs (max / Min): 0.7 S
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 1 A
• Power Dissipation: 2.9 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 1A
• Drain Source Voltage Vds: 200V
• On Resistance Rds(on): 1.5ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-3176-2

Electrical characteristics
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Electrical characteristics
(Tcase = 25 °C unless otherwise specified)
Table 5.
Table 6.
1. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Table 7.
Symbol
V
Symbol
Symbol
R
V
t
t
(BR)DSS
g
d(on)
d(off)
C
I
I
C
DS(on)
C
Q
GS(th)
Q
GSS
DSS
fs
Q
t
t
oss
r
f
iss
rss
gs
gd
g
(1)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Forward
transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source
breakdown voltage
Zero gate voltage
drain current (V
Gate-body leakage
current (V
Gate threshold voltage V
Static drain-source on
resistance
On /off states
Dynamic
Switching times
Parameter
Parameter
Parameter
DS
= 0)
GS
= 0)
V
R
(see
V
I
V
V
V
V
(see
I
V
V
V
V
D
D
DS
DS
GS
DD
GS
DD
DS
DS
GS
DS
GS
G
= 0.5 A
= 250 µA, V
= 4.7 Ω, V
= Max rating
= Max rating, T
> I
= 25 V, f = 1 MHz,
= 0
= 10 V
= 160 V, I
= ± 20 V
= V
= 10 V, I
= 160 V, I
Figure
Figure
Test conditions
D(on)
Test conditions
Test conditions
GS
, I
13)
14)
x R
D
D
GS
D
D
GS
= 250 µA
= 0.5 A
DS(on)max
= 4 A,
= 4 A,
= 10 V
= 0
C
=125 °C
,
Min.
Min.
Min.
200
3
Typ.
Typ.
Typ.
206
2.7
2.8
1.2
10
25
40
15
11
9
6
4
4
Max.
±100
Max.
Max
15.7
100
1.5
1
5
STN1N20
Unit
Unit
Unit
nC
nC
nC
µA
µA
nA
pF
pF
pF
ns
ns
ns
ns
Ω
V
V
S