STN1N20 STMicroelectronics, STN1N20 Datasheet - Page 11

• Manufacturer Part Number: STN1N20
• Description: MOSFET N-CH 200V 1A SOT223
• Manufacturer: STMicroelectronics

Specifications of STN1N20

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.5 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 1A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 15.7nC @ 10V
• Input Capacitance (ciss) @ Vds: 206pF @ 25V
• Power - Max: 2.9W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Configuration: Single Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.5 Ohms
• Forward Transconductance Gfs (max / Min): 0.7 S
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 1 A
• Power Dissipation: 2.9 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 1A
• Drain Source Voltage Vds: 200V
• On Resistance Rds(on): 1.5ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-3176-2

STN1N20
5
Revision history
Table 9.
31-Mar-2009
21-Jun-2004
Date
Document revision history
Revision
1
2
First release.
Document status promoted from preliminary data to datasheet.
Changes
Revision history
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