STN1N20 STMicroelectronics, STN1N20 Datasheet

MOSFET N-CH 200V 1A SOT223

STN1N20

Manufacturer Part Number
STN1N20
Description
MOSFET N-CH 200V 1A SOT223
Manufacturer
STMicroelectronics
Datasheets

Specifications of STN1N20

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
1.5 Ohm @ 500mA, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
1A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
15.7nC @ 10V
Input Capacitance (ciss) @ Vds
206pF @ 25V
Power - Max
2.9W
Mounting Type
Surface Mount
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Configuration
Single Dual Drain
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.5 Ohms
Forward Transconductance Gfs (max / Min)
0.7 S
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
1 A
Power Dissipation
2.9 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Continuous Drain Current Id
1A
Drain Source Voltage Vds
200V
On Resistance Rds(on)
1.5ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
3V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-3176-2

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STN1N20
Manufacturer:
ST
Quantity:
450
Part Number:
STN1N20
Manufacturer:
ST MICROELECTRONICS
Quantity:
30 000
Part Number:
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Manufacturer:
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Part Number:
STN1N20-TR
Manufacturer:
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0
APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
( ) Pulse width limited by safe operating area
September 1999
STN1N20
Symbol
TYPICAL R
AVALANCHE RUGGED TECHNOLOGY
SOT-223 CAN BE WAVE OR REFLOW
SOLDERED
AVAILABLE IN TAPE AND REEL ON
REQUEST
150
APPLICATION ORIENTED
CHARACTERIZATION
HARD DISK DRIVERS
SMALL MOTOR CURRENT SENSE
CIRCUITS
DC-DC CONVERTERS AND POWER
SUPPLIES
I
V
I
DM
I
V
V
T
P
D
D
DGR
T
stg
DS
GS
(*)
(*)
tot
TYPE
( )
j
o
C OPERATING TEMPERATURE
Drain-source Voltage (V
Drain- gate Voltage (R
Gate-source Voltage
Drain Current (continuous) at T
Drain Current (continuous) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Storage Temperature
Max. Operating Junction Temperature
®
DS(on)
200 V
V
= 1.2
DSS
N - CHANNEL 200V - 1.2
< 1.5
Parameter
R
DS(on)
c
GS
= 25
GS
= 20 k )
= 0)
o
C
I
c
c
D CONT
1 A
= 25
= 100
o
C
o
C
POWER MOS TRANSISTOR
(*) Limited by package
INTERNAL SCHEMATIC DIAGRAM
2
-65 to 150
Value
0.023
SOT-223
200
200
150
0.6
2.9
1
4
20
- 1A - SOT-223
1
2
STN1N20
PRELIMINARY DATA
3
W/
Unit
o
o
W
V
V
V
A
A
A
C
C
o
C
1/6

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STN1N20 Summary of contents

Page 1

... Storage Temperature stg T Max. Operating Junction Temperature Pulse width limited by safe operating area September 1999 POWER MOS TRANSISTOR I D CONT DS(on INTERNAL SCHEMATIC DIAGRAM = 100 (*) Limited by package STN1N20 - 1A - SOT-223 PRELIMINARY DATA SOT-223 Value Unit 200 V 200 0 2 0.023 W/ o -65 to 150 C ...

Page 2

... STN1N20 THERMAL DATA R Thermal Resistance Junction-PC Board thj-pcb R Thermal Resistance Junction-ambient thj-amb (Surface Mounted) T Maximum Lead Temperature For Soldering Purpose l AVALANCHE CHARACTERISTICS Symbol I Avalanche Current, Repetitive or Not-Repetitive AR (pulse width limited Single Pulse Avalanche Energy AS o (starting ELECTRICAL CHARACTERISTICS (T OFF Symbol Parameter ...

Page 3

... Pulsed: Pulse duration = 300 s, duty cycle 1 Pulse width limited by safe operating area Test Conditions V = 100 4 160 160 Test Conditions V = 160 4 Test Conditions di/dt = 100 150 STN1N20 Min. Typ. Max. Unit 270 Min. Typ. Max. Unit Min. Typ. Max. Unit 1.5 V 170 3/6 ...

Page 4

... STN1N20 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 4/6 Fig. 2: Unclamped Inductive Waveform Fig. 4: Gate Charge test Circuit ...

Page 5

... E g STN1N20 mils TYP. MAX. 90.6 91.7 181.1 182.3 7.9 15.7 23.6 25.6 26.4 63 66.9 12.6 118.1 122.1 27.6 28.7 275.6 287.4 137.8 145.7 248 255 ...

Page 6

... STN1N20 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice ...

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