FCP22N60N Fairchild Semiconductor, FCP22N60N Datasheet - Page 5

• Manufacturer Part Number: FCP22N60N
• Description: MOSFET N-CH 600V 22A TO-220
• Manufacturer: Fairchild Semiconductor
• Series: SupreMOS™r

Specifications of FCP22N60N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 165 mOhm @ 11A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 22A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 45nC @ 10V
• Input Capacitance (ciss) @ Vds: 1950pF @ 100V
• Power - Max: 205W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.14 Ohms
• Forward Transconductance Gfs (max / Min): 22 S
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 22 A
• Power Dissipation: 205 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FCP22N60N / FCPF22N60NT Rev. A2
Typical Performance Characteristics
Figure 12. Transient Thermal Response Curve - FCP22N60N
Figure 13. Transient Thermal Response Curve - FCPF22N60NT
0.001
0.01
0.01
0.1
0.1
5
1
10
1
10
0.05
0.5
Single pulse
0.2
0.02
0.01
-5
0.1
0.05
0.5
0.2
0.02
-5
0.1
0.01
Single pulse
10
-4
10
-4
10
-3
Rectangular Pulse Duration [sec]
Rectangular Pulse Duration [sec]
10
-3
10
-2
5
10
-2
10
-1
*Notes:
10
1. Z
2. Duty Factor, D= t
3. T
*Notes:
P
P
-1
DM
10
1. Z
2. Duty Factor, D= t
3. T
JM
DM
JC
0
- T
JM
(t) = 3.2
JC
C
- T
(t) = 0.61
= P
t
C
1
t
1
t
= P
2
DM
o
t
2
C/W Max.
10
1
DM
* Z
o
1
C/W Max.
1
* Z
/t
JC
2
1
(t)
/t
JC
2
(t)
10
10
2
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