FCP22N60N Fairchild Semiconductor, FCP22N60N Datasheet - Page 4

• Manufacturer Part Number: FCP22N60N
• Description: MOSFET N-CH 600V 22A TO-220
• Manufacturer: Fairchild Semiconductor
• Series: SupreMOS™r

Specifications of FCP22N60N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 165 mOhm @ 11A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 22A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 45nC @ 10V
• Input Capacitance (ciss) @ Vds: 1950pF @ 100V
• Power - Max: 205W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.14 Ohms
• Forward Transconductance Gfs (max / Min): 22 S
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 22 A
• Power Dissipation: 205 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FCP22N60N / FCPF22N60NT Rev. A2
Typical Performance Characteristics
Figure 11. Maximum Drain Current vs.Case Temperature
Figure 7. Breakdown Voltage Variation
Figure 9. Maximum Safe Operating Area
0.01
100
1.2
1.1
1.0
0.9
0.8
0.1
10
25
20
15
10
-100
1
5
0
25
1
Operation in This Area
is Limited by R
-50
- FCP22N60N
vs. Temperature
50
T
V
J
T
, Junction Temperature
DS
C
, Case Temperature
, Drain-Source Voltage [V]
10
0
DS(on)
75
*Notes:
50
1. T
2. T
3. Single Pulse
C
J
= 150
100
= 25
100
100
o
o
C
C
[
*Notes:
o
C
[
1. V
2. I
10ms
o
]
1ms
DC
125
C
100 s
D
150
GS
]
= 1mA
= 0V
10 s
1000
200
150
(Continued)
4
Figure 8. On-Resistance Variation
0.01
100
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Figure 10. Maximum Safe Operating Area
0.1
10
-100
1
1
Operation in This Area
is Limited by R
-50
T
vs. Temperature
J
V
, Junction Temperature
DS
*Notes:
- FCPF22N60NT
1. T
2. T
3. Single Pulse
, Drain-Source Voltage [V]
10
0
DS(on)
C
J
= 150
= 25
o
o
C
50
C
100
100
*Notes:
[
1. V
2. I
100ms
o
10ms
100 s
C
1ms
D
150
]
GS
= 11A
10 s
www.fairchildsemi.com
= 10V
1000
200