RFP30N06LE Fairchild Semiconductor, RFP30N06LE Datasheet - Page 2

• Manufacturer Part Number: RFP30N06LE
• Description: MOSFET N-CH 60V 30A TO-220AB
• Manufacturer: Fairchild Semiconductor

Specifications of RFP30N06LE

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 47 mOhm @ 30A, 5V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 30A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 62nC @ 10V
• Input Capacitance (ciss) @ Vds: 1350pF @ 25V
• Power - Max: 96W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.047 Ohm @ 5 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: - 8 V or 10 V
• Continuous Drain Current: 30 A
• Power Dissipation: 96000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Absolute Maximum Ratings
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain to Gate Voltage (R
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
Electrostatic Discharge Rating, MIL-STD-883, Category B(2). . . . . . . . . . . . . . . .ESD
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Maximum Temperature for Soldering
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
Electrical Specifications
Source to Drain Diode Specifications
NOTES:
©2004 Fairchild Semiconductor Corporation
Drain to Source Breakdown Voltage
Gate to Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at 5V
Threshold Gate Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
Source to Drain Diode Voltage (Note 2)
Diode Reverse Recovery Time
1. T
2. Pulse Test: Pulse Width 300ms, Duty Cycle 2%.
3. Repetitive Rating: Pulse Width limited by max junction temperature. See Transient Thermal Impedance Curve (Figure 3) and Peak Current
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Derate Above 25
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Package Body for 10s, See Techbrief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Capability Curve (Figure 5).
J
= 25
o
C to 150
PARAMETER
PARAMETER
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
o
C.
GS
= 20k
T
(Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . V
C
= 25
T
A
= 25
o
C, Unless Otherwise Specified
o
C, Unless Otherwise Specified
SYMBOL
SYMBOL
V
Q
r
BV
t
Q
DS(ON)
t
d(OFF)
C
C
GS(TH)
Q
R
R
I
I
d(ON)
C
t
g(TOT)
V
DSS
GSS
t
OFF
g(TH)
OSS
RSS
ON
g(5)
t
ISS
DSS
t
t
SD
rr
r
f
JC
JA
I
V
V
V
V
I
V
R
Figures 13, 16, 17
V
V
V
V
f = 1MHz
Figure 12
I
I
D
D
SD
SD
GS
DS
DS
GS
DD
GS
GS
GS
DS
GS
= 250 A, V
= 30A, V
= 30A
= 30A, dI
= Rated B
= 0.8 x Rated B
= 30V, I
= 25V, V
= V
= +10, -8V
= 2.5
= 0V to 10V
= 0V to 5V
= 0V to 1V
DS
TEST CONDITIONS
, I
GS
D
D
SD
GS
GS
TEST CONDITIONS
= 5V, Figure 9
= 30A, R
VDSS
= 250 A, Figure 10
J
/dt = 100A/ s
, T
= 0V,
= 0V, Figure 11
DGR
DSS
STG
pkg
DM
GS
, V
VDSS
AS
D
D
L
GS
L
= 1 , V
V
I
R
Figures 18, 19
, V
D
= 0
DD
L
= 30A,
GS
= 1.6
= 48V,
RFP30N06LE, RF1S30N06LESM
= 0, T
GS
Refer to Peak Current Curve
= 5V,
C
Refer to UIS Curve
= 150
-55 to 175
MIN
+10, -8
o
0.645
-
-
C
300
260
60
60
30
96
2
RFP30N06LE, RF1S30N06LESM Rev. B1
MIN
60
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP
-
-
1350
TYP
290
1.8
11
88
30
40
51
28
85
-
-
-
-
-
-
-
-
-
-
MAX
125
1.5
0.047
MAX
1.55
250
140
100
2.6
25
62
34
80
10
2
-
-
-
-
-
-
-
-
UNITS
W/
UNITS
kV
o
o
o
W
V
V
V
A
UNITS
C
C
C
o
o
o
ns
C/W
C/W
V
C
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
ns
V
V
A
A
A