RFP30N06LE Fairchild Semiconductor, RFP30N06LE Datasheet

MOSFET N-CH 60V 30A TO-220AB

RFP30N06LE

Manufacturer Part Number
RFP30N06LE
Description
MOSFET N-CH 60V 30A TO-220AB
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of RFP30N06LE

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
47 mOhm @ 30A, 5V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
30A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
62nC @ 10V
Input Capacitance (ciss) @ Vds
1350pF @ 25V
Power - Max
96W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.047 Ohm @ 5 V
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
- 8 V or 10 V
Continuous Drain Current
30 A
Power Dissipation
96000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
RFP30N06LE
Manufacturer:
FSC
Quantity:
1 195
Part Number:
RFP30N06LE
Manufacturer:
CADDOCK
Quantity:
6 000
Part Number:
RFP30N06LER4114
Manufacturer:
STM
Quantity:
5 217
©2004 Fairchild Semiconductor Corporation
30A, 60V, ESD Rated, 0.047 Ohm, Logic
Level N-Channel Power MOSFETs
These are N-Channel power MOSFETs manufactured using
the MegaFET process. This process, which uses feature
sizes approaching those of LSI integrated circuits gives
optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers and relay drivers. These transistors can be operated
directly from integrated circuits.
These transistors incorporate ESD protection and are
designed to withstand 2kV (Human Body Model) of ESD.
Formerly developmental type TA49027.
Ordering Information
NOTE: When ordering use the entire part number. Add suffix, 9A, to
obtain the TO-263 variant in tape and reel i.e. RF1S30N06LESM9A.
Packaging
RFP30N06LE
RF1S30N06LESM
PART NUMBER
DRAIN (FLANGE)
TO-220AB
TO-263AB
PACKAGE
JEDEC TO-220AB
Data Sheet
P30N06LE
1S30N06L
SOURCE
BRAND
DRAIN
GATE
RFP30N06LE, RF1S30N06LESM
Features
• 30A, 60V
• r
• 2kV ESD Protected
• Temperature Compensating PSPICE
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
Symbol
- TB334 “Guidelines for Soldering Surface Mount
DS(ON)
Components to PC Boards”
SOURCE
January 2004
GATE
= 0.047
JEDEC TO-263AB
G
RFP30N06LE, RF1S30N06LESM Rev. B1
D
S
(FLANGE)
DRAIN
®
Model

Related parts for RFP30N06LE

RFP30N06LE Summary of contents

Page 1

... Peak Current vs Pulse Width Curve • UIS Rating Curve • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol BRAND P30N06LE 1S30N06L SOURCE DRAIN GATE SOURCE January 2004 = 0.047 ® Model JEDEC TO-263AB DRAIN GATE (FLANGE) RFP30N06LE, RF1S30N06LESM Rev. B1 ...

Page 2

... SD SD RFP30N06LE, RF1S30N06LESM 60 60 +10 Refer to Peak Current Curve Refer to UIS Curve 0.645 2 -55 to 175 300 L 260 MIN TYP 150 C - VDSS 5V 48V 30A 1 Figures 18 1350 - 290 - - - MIN TYP - - - - RFP30N06LE, RF1S30N06LESM Rev. B1 UNITS MAX UNITS - - 250 0.047 - 140 100 1.8 2 1.55 C C/W ...

Page 3

... T , CASE TEMPERATURE ( C) C CASE TEMPERATURE NOTES: DUTY FACTOR PEAK FOR TEMPERATURES o ABOVE 25 C DERATE PEAK CURRENT AS FOLLOWS: 175 T – ---------------------- - 10V 150 TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION - PULSE WIDTH (s) FIGURE 5. PEAK CURRENT CAPABILITY RFP30N06LE, RF1S30N06LESM Rev. B1 150 175 + ...

Page 4

... DUTY CYCLE = 0.5% MAX 30A GS D 2.0 1.5 1.0 0.5 0 -80 - JUNCTION TEMPERATURE ( J RESISTANCE vs JUNCTION TEMPERATURE 2 250 A D 1.5 1.0 0.5 0 -80 - JUNCTION TEMPERATURE ( J VOLTAGE vs JUNCTION TEMPERATURE RFP30N06LE, RF1S30N06LESM Rev 4. 6.0 7.5 160 120 200 o C) 120 160 200 o C) ...

Page 5

... BV DSS DSS 0.25 BV 0.25 BV DSS DSS 2 0.62mA G(REF G(REF) G(REF TIME ( G(ACT) G(ACT) CONSTANT GATE CURRENT BV DSS FIGURE 15. UNCLAMPED ENERGY WAVEFORMS d(ON 90% 10% 50% PULSE WIDTH 10% FIGURE 17. RESISTIVE SWITCHING WAVEFORMS RFP30N06LE, RF1S30N06LESM Rev. B1 5.0 DSS 3.75 2.5 1. OFF t d(OFF 90% 10% 90% 50% ...

Page 6

... Test Circuits and Waveforms G(REF) FIGURE 18. GATE CHARGE TEST CIRCUIT ©2004 Fairchild Semiconductor Corporation (Continued DUT G(REF g(TOT g( g(TH) FIGURE 19. GATE CHARGE WAVEFORMS RFP30N06LE, RF1S30N06LESM Rev 10V GS ...

Page 7

... PSPICE Electrical Model SUBCKT RFP30N06LE rev 6/2/ 3.34e 3.44e-9 CIN 1.343e-9 DBODY 7 5 DBDMOD DBREAK 5 11 DBKMOD DESD1 91 9 DESD1MOD DESD2 91 7 DESD2MOD DPLCAP 10 5 DPLCAPMOD EBREAK 75.39 EDS EGS ESG EVTO LDRAIN 2 5 1e-9 LGATE 1 9 7.22e-9 LSOURCE 3 7 6.31e-9 MOS1 MOSMOD ...

Page 8

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ActiveArray™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ ...

Related keywords