FDMS6681Z Fairchild Semiconductor, FDMS6681Z Datasheet - Page 4

• Manufacturer Part Number: FDMS6681Z
• Description: MOSFET P-CH 30V 21.1A POWER56
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDMS6681Z

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.2 mOhm @ 22.1A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 21.1A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 241nC @ 10V
• Input Capacitance (ciss) @ Vds: 10380pF @ 15V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-PQFN, Power56
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.0035 Ohms
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 21.1 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDMS6681ZTR

©2009 Fairchild Semiconductor Corporation
FDMS6681Z Rev.C4
Typical Characteristics
0.01
100
0.1
100
10
10
50
Figure 7.
0.001
1
8
6
4
2
0
0.01
1
0
THIS AREA IS
LIMITED BY r
I
Figure 9. Unclamped Inductive
D
Figure 11.
= -22.1 A
-V
0.01
Switching Capability
DS
Gate Charge Characteristics
0.1
50
t
, DRAIN to SOURCE VOLTAGE (V)
AV
Operating Area
DS(on)
SINGLE PULSE
T
R
T
, TIME IN AVALANCHE (ms)
J
A
V
JA
Forward Bias Safe
Q
= MAX RATED
DD
= 25
g
= 125
, GATE CHARGE (nC)
= -10 V
0.1
o
C
T
o
J
100
C/W
1
= 125
T
J
V
= 25
DD
T
o
J
1
C
= -20 V
= 25 °C unless otherwise noted
o
C
V
10
150
DD
T
= -15 V
J
10
= 100
10 ms
100 ms
10 s
1 ms
1 s
DC
o
C
100
200
100
4
20000
10000
1000
1000
100
10
10
10
10
10
10
0.1
600
10
0.001
1
-4
-5
-6
-7
-8
-9
Figure 12.
0.1
0
Figure 8.
f = 1 MHz
V
V
GS
GS
Figure 10.
T
0.01
= 0 V
= 0 V
J
5
= 150
-V
Power Dissipation
V
to Source Voltage
DS
GS ,
Single Pulse Maximum
V
Capacitance vs Drain
, DRAIN TO SOURCE VOLTAGE (V)
t, PULSE WIDTH (sec)
o
GATE TO SOURCE VOLTAGE (V)
GS
C
0.1
10
T
= -10 V
J
= 25
I
1
gss
o
C
15
1
vs V
gss
10
20
SINGLE PULSE
R
T
A
JA
= 25
= 125
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o
100
C
10
25
o
C
C
C/W
C
iss
oss
rss
1000
30
30