FDMS6681Z Fairchild Semiconductor, FDMS6681Z Datasheet - Page 3

• Manufacturer Part Number: FDMS6681Z
• Description: MOSFET P-CH 30V 21.1A POWER56
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDMS6681Z

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.2 mOhm @ 22.1A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 21.1A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 241nC @ 10V
• Input Capacitance (ciss) @ Vds: 10380pF @ 15V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-PQFN, Power56
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.0035 Ohms
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 21.1 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDMS6681ZTR

©2009 Fairchild Semiconductor Corporation
FDMS6681Z Rev.C4
Typical Characteristics
1.6
1.4
1.2
1.0
0.8
0.6
90
75
60
45
30
15
90
75
60
45
30
15
Figure 3. Normalized On Resistance
0
Figure 1.
0
-75
Figure 5. Transfer Characteristics
0
0
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
I
V
V
D
GS
-50
DS
= -22.1 A
vs Junction Temperature
-V
= -10 V
= -5 V
DS
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
T
-25
,
J
On Region Characteristics
,
DRAIN TO SOURCE VOLTAGE (V)
-V
JUNCTION TEMPERATURE
1
GS
V
V
V
GS
GS
, GATE TO SOURCE VOLTAGE (V)
GS
0
1
= -4.5 V
= -10V
= -4 V
T
V
25
J
GS
= 25
T
= -3.5 V
2
J
50
= 150
T
o
C
J
= 25 °C unless otherwise noted
o
75
C
2
(
o
100 125 150
3
C
V
)
T
GS
J
= -55
= -3 V
o
C
3
4
3
0.001
0.01
100
0.1
12
10
1
9
6
3
0
5
4
3
2
1
0
Figure 2.
Figure 4.
Forward Voltage vs Source Current
0
0
2
vs Drain Current and Gate Voltage
Figure 6.
V
V
T
-V
GS
GS
J
0.2
SD
15
= 150
= 0 V
= -3 V
-V
, BODY DIODE FORWARD VOLTAGE (V)
Normalized On-Resistance
On-Resistance vs Gate to
GS
-I
Source Voltage
4
Source to Drain Diode
D
o
,
,
C
GATE TO SOURCE VOLTAGE (V)
DRAIN CURRENT (A)
0.4
30
PULSE DURATION = 80 s
DUTY CYCLE = 0.5%MAX
V
V
GS
GS
0.6
45
= -4.5 V
6
= -3.5 V
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
T
T
J
J
= 125
= 25
0.8
60
o
o
C
T
C
T
J
J
8
= -55
= 25
V
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I
V
GS
D
1.0
75
GS
= -22.1 A
o
= -10 V
o
C
C
= -4 V
1.2
90
10