FDMS2572 Fairchild Semiconductor, FDMS2572 Datasheet - Page 3

• Manufacturer Part Number: FDMS2572
• Description: MOSFET N-CH 150V 4.5A POWER56
• Manufacturer: Fairchild Semiconductor
• Series: UltraFET™r

Specifications of FDMS2572

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 47 mOhm @ 4.5A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 4.5A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 43nC @ 10V
• Input Capacitance (ciss) @ Vds: 2610pF @ 75V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-MLP, Power56
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.036 Ohms
• Forward Transconductance Gfs (max / Min): 14 S
• Drain-source Breakdown Voltage: 150 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 4.5 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDMS2572TR

FDMS2572 Rev.C2
Typical Characteristics
40
35
30
25
20
15
10
5
0
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
Figure 3. Normalized On - Resistance
60
50
40
30
20
10
Figure 1.
0
0
-75
1
Figure 5. Transfer Characteristics
V
V
GS
GS
PULSE DURATION = 300
DUTY CYCLE = 2.0%MAX
V
I
D
-50
GS
vs Junction Temperature
= 10V
= 6V
V
V
= 4.5A
DS
GS
= 10V
1
T
, DRAIN TO SOURCE VOLTAGE (V)
2
, GATE TO SOURCE VOLTAGE (V)
J
-25
On-Region Characteristics
, JUNCTION TEMPERATURE
V
0
GS
2
3
= 5.5V
T
J
25
= 25
PULSE DURATION = 300
DUTY CYCLE = 2.0%MAX
µ
s
T
o
C
J
T
50
3
= 125
J
4
= 25°C unless otherwise noted
75
o
C
V
V
GS
GS
100 125 150
4
(
o
T
5
= 4.5V
= 5V
C
J
)
=-55
µ
s
o
C
5
6
3
1E-3
1E-4
0.01
0.1
1.8
1.6
1.4
1.2
1.0
0.8
60
10
110
100
1
90
80
70
60
50
40
30
Figure 2.
Figure 4.
0.0
Forward Voltage vs Source Current
0
vs Drain Current and Gate Voltage
Figure 6.
3
V
GS
V
SD
T
= 0V
V
0.2
V
J
, BODY DIODE FORWARD VOLTAGE (V)
GS
4
GS
= 125
Normalized On-Resistance
8
=4.5V
On-Resistance vs Gate to
, GATE TO SOURCE VOLTAGE (V)
I
D
Source Voltage
Source to Drain Diode
, DRAIN CURRENT(A)
o
C
I
5
D
0.4
= 4.5A
16
V
6
GS
0.6
PULSE DURATION = 300
DUTY CYCLE = 2.0%MAX
=5V
PULSE DURATION =300
DUTY CYCLE = 2.0%MAX
7
24
0.8
T
T
J
T
J
J
T
= -55
8
= 150
= 25
J
= 25
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32
o
V
o
1.0
V
V
C
C
o
GS
GS
GS
o
C
C
9
= 6V
= 10V
=5.5V
µ
µ
s
s
1.2
40
10