FDS8670 Fairchild Semiconductor, FDS8670 Datasheet - Page 3

MOSFET N-CH 30V 21A 8-SOIC

FDS8670

Manufacturer Part Number
FDS8670
Description
MOSFET N-CH 30V 21A 8-SOIC
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDS8670

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
3.7 mOhm @ 21A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
21A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
82nC @ 10V
Input Capacitance (ciss) @ Vds
4040pF @ 15V
Power - Max
1W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Single Quad Drain Triple Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0037 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
118 S
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
21 A
Power Dissipation
2500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDS8670TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDS8670
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Part Number:
FDS8670-NL
Manufacturer:
FAIRCHILD
Quantity:
12 611
Part Number:
FDS8670-NL
Manufacturer:
FAI
Quantity:
20 000
Typical Characteristics
105
70
35
87.5
52.5
17.5
105
0
1.6
1.4
1.2
0.8
0.6
70
35
Figure 3. On-Resistance Variation with
1
0
1
-50
Figure 1. On-Region Characteristics.
0
Figure 5. Transfer Characteristics.
V
DS
V
V
I
D
GS
= 5V
GS
6.0V
= 21A
-25
= 10V
= 10V
1.5
V
GS
T
0.5
V
0
J
, GATE TO SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (
DS
Temperature.
T
4.5V
, DRAIN-SOURCE VOLTAGE (V)
A
=125
3.5V
25
2
o
C
50
1
3.0V
25
2.5
2.5V
o
75
C
-55
o
C
100
o
1.5
C)
3
125
150
3.5
2
Figure 6. Body Diode Forward Voltage Variation
0.0001
0.001
0.011
0.008
0.005
0.002
1000
0.01
100
0.1
10
3.4
2.8
2.2
1.6
0.4
1
Figure 2. On-Resistance Variation with
Figure 4. On-Resistance Variation with
with Source Current and Temperature.
1
0
2
0
V
T
Drain Current and Gate Voltage.
GS
A
= 25
= 0V
V
GS
o
3.0V
Gate-to-Source Voltage.
0.2
C
= 2.5V
V
SD
T
V
, BODY DIODE FORWARD VOLTAGE (V)
A
GS
4
= 125
, GATE TO SOURCE VOLTAGE (V)
3.5V
T
0.4
35
o
I
A
D
C
, DRAIN CURRENT (A)
= 125
4.0V
o
C
25
6
0.6
o
C
4.5V
70
0.8
-55
6.0V
o
8
C
FDS8670 Rev D1 (W)
I
D
= 10.5A
1
10V
105
10
1.2

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