FDS8670 Fairchild Semiconductor, FDS8670 Datasheet
FDS8670
Manufacturer Part Number
FDS8670
Description
MOSFET N-CH 30V 21A 8-SOIC
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDS8670.pdf
(5 pages)
Specifications of FDS8670
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
3.7 mOhm @ 21A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
21A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
82nC @ 10V
Input Capacitance (ciss) @ Vds
4040pF @ 15V
Power - Max
1W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Single Quad Drain Triple Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0037 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
118 S
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
21 A
Power Dissipation
2500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDS8670TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDS8670
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
FDS8670-NL
Manufacturer:
FAIRCHILD
Quantity:
12 611
Part Number:
FDS8670-NL
Manufacturer:
FAI
Quantity:
20 000
FDS8670
30V N-Channel PowerTrench
General Description
This device has been designed specifically to improve
the efficiency of DC-DC converters. Using new
techniques in MOSFET construction, the various
components of gate charge and capacitance have been
optimized to reduce switching losses. Low gate
resistance and very low Miller charge enable excellent
performance with both adaptive and fixed dead time
gate drive circuits. Very low Rds(on) has been
maintained to provide an extremely versatile device.
Applications
•
E
©2008 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
Symbol
V
V
I
P
T
Thermal Characteristics
R
R
Package Marking and Ordering Information
D
AS
J
DSS
GSS
D
θJA
θJC
, T
Device Marking
STG
High Efficiency DC-DC Converters:
•
•
•
FDS8670
Notebook Vcore Power Supply
Telecom Brick Synchronous Rectifier
Multi purpose Point Of Load
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
Single Pulse Avalanche Energy
D
D
SO-8
D
D
– Continuous
– Pulsed
FDS8670
Device
S
Parameter
S
S
G
®
T
A
MOSFET
=25
o
C unless otherwise noted
Reel Size
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
13’’
(Note 1c)
(Note 3)
(Note 1)
Features
• 21 A, 30 V
• High performance trench technology for extremely low
• Minimal Qgd (5.5 nC typical)
• 100% R
•
•
R
100% UIL tested
RoHS Compliant
DS(ON)
and gate charge
G
tested (0.9 Ω typical)
5
6
7
8
Tape width
Max R
Max R
–55 to +150
12mm
Ratings
433
±20
105
2.5
1.2
30
21
50
25
1
DS(ON)
DS(ON)
= 3.7 mΩ @ V
= 5.0 mΩ @ V
January 2008
4
3
2
1
FDS8670 Rev D1 (W)
2500 units
Quantity
GS
GS
Units
= 10 V
= 4.5 V
°C/W
tm
°C
W
mJ
V
V
A
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FDS8670 Summary of contents
Page 1
... Reel Size 13’’ January 2008 tm Max R = 3.7 mΩ DS(ON) GS Max R = 5.0 mΩ 4.5 V DS(ON) GS tested (0.9 Ω typical Ratings Units 30 ± 105 2.5 W 1.2 1 433 mJ –55 to +150 °C 50 °C/W 25 Tape width Quantity 12mm 2500 units FDS8670 Rev D1 ( ...
Page 2
... Min Typ Max Units 30 V mV/° µA ±100 mV/°C –5 3.3 3.7 mΩ 4.2 5.0 4.4 5.5 118 S 4040 pF 1730 pF 160 pF 0.2 0.9 1.5 Ω 108 ns 58 9.5 nC 5.5 nC 0.7 1.2 V (Note 1 125°/W when mounted on a minimum pad. FDS8670 Rev D1 (W) ...
Page 3
... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. = 2.5V 3.0V 3.5V 4.0V 4.5V 6.0V 10V DRAIN CURRENT ( 10. 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDS8670 Rev D1 (W) 105 10 1.2 ...
Page 4
... Figure 10. Single Pulse Maximum 0.01 0 TIME (sec 1MHz iss C oss DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 125°C/W θ 25° 100 t , TIME (sec) 1 Power Dissipation. R ( θJA θ 125 °C/W θJA P(pk ( θJA Duty Cycle 100 1000 FDS8670 Rev D1 (W) 30 1000 ...
Page 5
... SupreMOS™ SyncFET™ ® ® ® The Power Franchise tm TinyBoost™ TinyBuck™ ® TinyLogic TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ µSerDes™ ® UHC Ultra FRFET™ UniFET™ VCX™ Definition FDS8670 Rev D1 (W) Rev. I33 ...