FDD3672 Fairchild Semiconductor, FDD3672 Datasheet - Page 7

• Manufacturer Part Number: FDD3672
• Description: MOSFET N-CH 100V 44A D-PAK
• Manufacturer: Fairchild Semiconductor
• Series: UltraFET™r
• Type: Power MOSFETr

Specifications of FDD3672

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 28 mOhm @ 44A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 44A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 36nC @ 10V
• Input Capacitance (ciss) @ Vds: 1710pF @ 25V
• Power - Max: 135W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.028Ohm
• Drain-source On-volt: 100V
• Gate-source Voltage (max): ±20V
• Drain Current (max): 6.5A
• Power Dissipation: 135W
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: TO-252
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.028 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 6.5 A
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDD3672; FDD3672TR

©2010 Fairchild Semiconductor Corporation
Thermal Resistance vs. Mounting Pad Area
The maximum rated junction temperature, T
thermal resistance of the heat dissipating path determines
the maximum allowable device power dissipation, P
application.
temperature, T
must be reviewed to ensure that T
Equation 1 mathematically represents the relationship and
serves as the basis for establishing the rating of the part.
In using surface mount devices such as the TO-252
package, the environment in which it is applied will have a
significant influence on the part’s current and maximum
power dissipation ratings. Precise determination of P
complex and influenced by many factors:
1. Mounting pad area onto which the device is attached and
2. The number of copper layers and the thickness of the
3. The use of external heat sinks.
4. The use of thermal vias.
5. Air flow and board orientation.
6. For non steady state applications, the pulse width, the
Fairchild provides thermal information to assist the
designer’s preliminary application evaluation. Figure 20
defines the R
copper (component side) area. This is for a horizontally
positioned FR-4 board with 1oz copper after 1000 seconds
of steady state power with no air flow. This graph provides
the necessary information for calculation of the steady state
junction
applications can be evaluated using the Fairchild device
Spice thermal model or manually utilizing the normalized
maximum transient thermal impedance curve.
Thermal resistances corresponding to other copper areas
can be obtained from Figure 20 or by calculation using
Equation 2 or 3. Equation 2 is used for copper area defined
in inches square and equation 3 is for area in centimeters
square. The area, in square inches or square centimeters is
the top copper area including the gate and source pads.
R
R
P D M
whether there is copper on one side or both sides of the
board.
board.
duty cycle and the transient thermal response of the part,
the board and the environment they are in.
θ JA
θ JA
=
=
=
-----------------------------
(
temperature
T
33.32
33.32
JM
R
θ JA
θJA
A
–
T
(
Therefore
+
+
o
A
for the device as a function of the top
C), and thermal resistance R
)
------------------------------------ -
(
--------------------------------- -
(
0.268
1.73
23.84
154
or
+
+
Area
Area
the
power
)
)
Area in Centimeters Squared
application’s
JM
dissipation.
is never exceeded.
Area in Inches Squared
JM
θJA
, and the
(EQ. 1)
(EQ. 2)
(EQ. 3)
DM
ambient
(
o
, in an
Pulse
DM
C/W)
is
125
100
Figure 20. Thermal Resistance vs Mounting
75
50
25
(0.0645)
0.01
AREA, TOP COPPER AREA in
(0.645)
0.1
R
Pad Area
θJA
R
θJA
= 33.32+ 23.84/(0.268+Area) EQ.2
= 33.32+ 154/(1.73+Area) EQ.3
(6.45)
1
2
(cm
2
)
FDD3672 Rev. A2
(64.5)
10