FDD4685 Fairchild Semiconductor, FDD4685 Datasheet - Page 5

• Manufacturer Part Number: FDD4685
• Description: MOSFET P-CH 40V 8.4A DPAK
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDD4685

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 27 mOhm @ 8.4A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 8.4A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 27nC @ 5V
• Input Capacitance (ciss) @ Vds: 2380pF @ 20V
• Power - Max: 3W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.027 Ohm @ 10 V
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 8.4 A
• Power Dissipation: 69000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDD4685TR

FDD4685 Rev.B
Typical Characteristics
1E-3
0.01
0.1
2
1
10
-5
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
10
-4
T
Figure 13. Transient Thermal Response Curve
J
= 25°C unless otherwise noted
10
t, RECTANGULAR PULSE DURATION (s)
-3
5
10
-2
10
-1
NOTES:
DUTY FACTOR: D = t
PEAK T
J
= P
DM
x Z
P
θJC
DM
10
1
/t
x R
0
2
θJC
t
1
+ T
t
2
C
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10
1