FDD5614P Fairchild Semiconductor, FDD5614P Datasheet - Page 4

• Manufacturer Part Number: FDD5614P
• Description: MOSFET P-CH 60V 15A DPAK
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r
• Type: Power MOSFETr

Specifications of FDD5614P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 100 mOhm @ 4.5A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 15A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 24nC @ 10V
• Input Capacitance (ciss) @ Vds: 759pF @ 30V
• Power - Max: 1.6W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.1 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 8 S
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 15 A
• Power Dissipation: 42000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.1Ohm
• Drain-source On-volt: 60V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: TO-252
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDD5614PTR

Typical Characteristics
15
12
15
12
9
6
3
0
9
6
3
0
Figure 3. On-Resistance Variation with
1
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0
Figure 1. On-Region Characteristics.
2
1
-50
Figure 5. Transfer Characteristics.
V
V
GS
-6.0V
DS
V
I
= -5V
= -10V
D
GS
-25
= -4.5A
= -10V
1
-V
2
-V
GS
0
T
DS
, GATE TO SOURCE VOLTAGE (V)
J
, JUNCTION TEMPERATURE (
Temperature.
-4.0V
, DRAIN-SOURCE VOLTAGE (V)
25
2
-4.5V
50
T
A
3
= -55
75
o
C
3
-3.5V
-3.0V
100
125
-2.5V
o
o
4
C
C)
125
25
4
o
C
150
175
5
5
Figure 6. Body Diode Forward Voltage Variation
0.4
0.3
0.2
0.1
0.001
0
0.01
100
0.1
1.8
1.6
1.4
1.2
0.8
2
10
Figure 2. On-Resistance Variation with
Figure 4. On-Resistance Variation with
with Source Current and Temperature.
1
1
0
0
V
Drain Current and Gate Voltage.
GS
T
A
= 0V
= 25
V
0.2
GS
Gate-to-Source Voltage.
o
-V
C
= -3.5V
-V
SD
2
4
GS
, BODY DIODE FORWARD VOLTAGE (V)
T
, GATE TO SOURCE VOLTAGE (V)
0.4
A
= 125
T
A
-I
= 125
D
-4.0V
, DRAIN CURRENT (A)
o
C
4
0.6
o
-4.5V
C
6
-5.0V
25
-6.0V
o
0.8
C
-55
6
o
C
-10V
1
8
FDD5614P Rev C1(W)
8
I
D
1.2
= -2.3 A
1.4
10
10