FDD5614P Fairchild Semiconductor, FDD5614P Datasheet - Page 2

• Manufacturer Part Number: FDD5614P
• Description: MOSFET P-CH 60V 15A DPAK
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r
• Type: Power MOSFETr

Specifications of FDD5614P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 100 mOhm @ 4.5A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 15A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 24nC @ 10V
• Input Capacitance (ciss) @ Vds: 759pF @ 30V
• Power - Max: 1.6W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.1 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 8 S
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 15 A
• Power Dissipation: 42000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.1Ohm
• Drain-source On-volt: 60V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: TO-252
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDD5614PTR

Electrical Characteristics
Symbol
Drain-Source Avalanche Ratings
W
I
Off Characteristics
BV
∆BV
I
I
I
On Characteristics
V
∆V
R
I
g
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
Drain–Source Diode Characteristics and Maximum Ratings
I
V
AR
DSS
GSSF
GSSR
D(on)
d(on)
r
d(off)
f
S
FS
GS(th)
SD
∆T
∆T
DS(on)
iss
oss
rss
g
gs
gd
DSS
GS(th)
DSS
DSS
J
J
Single Pulse Drain-Source
Avalanche Energy
Maximum Drain-Source Avalanche
Current
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
Parameter
(Note 2)
(Note 2)
(Note 1)
V
I
V
V
V
V
I
V
V
V
V
V
V
f = 1.0 MHz
V
V
V
V
V
T
D
D
V
A
GS
DS
GS
GS
DS
GS
GS
GS
GS
DS
DS
DD
GS
DS
GS
GS
= –250 µA, Referenced to 25°C
= –250 µA, Referenced to 25°C
= 25°C unless otherwise noted
DD
= 0 V, I
= –48 V,
= 20V,
= –20 V,
= V
= –10 V,
= –4.5 V,
= –10 V,I
= –10 V,
= –5 V,
= –30 V,
= –30 V,
= –10 V,
= –30V,
= –10 V
= 0 V,
= –30 V,
Test Conditions
GS
, I
D
D
= –250 µA
I
= –250 µA
D
S
= –4.5 A,T
= –3.2 A
V
V
V
I
I
I
V
I
V
I
GS
DS
DS
D
D
D
D
I
R
D
D
DS
GS
= –4.5 A
= –4.5 A
= –3.9 A
= –3 A
GEN
= –4.5 A,
= 0 V
= 0 V
= 0 V
= –1 A,
= –5 V
= 0 V,
= 6 Ω
J
(Note 2)
=125°C
–60
Min
–20
–1
Typ Max Units
–1.6
–0.8
–49
137
759
2.5
3.0
76
99
90
39
10
19
12
15
4
8
7
–100
–4.5
–3.2
–1.2
100
100
130
185
90
–1
–3
14
20
34
22
24
FDD5614P Rev C1(W)
mV/°C
mV/°C
mΩ
mJ
nC
nC
nC
µA
nA
nA
pF
pF
pF
ns
ns
ns
ns
A
V
V
A
S
A
V