FDD8780 Fairchild Semiconductor, FDD8780 Datasheet - Page 3

• Manufacturer Part Number: FDD8780
• Description: MOSFET N-CH 25V 35A TO-252AA
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDD8780

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8.5 mOhm @ 35A, 10V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 35A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 29nC @ 10V
• Input Capacitance (ciss) @ Vds: 1440pF @ 13V
• Power - Max: 50W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 6.5 m Ohms
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 35 A
• Power Dissipation: 50 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDD8780TR

FDD8780/FDU8780 Rev. B
Typical Characteristics
Figure 3.
1.8
1.6
1.4
1.2
1.0
0.8
0.6
70
60
50
40
30
20
10
70
60
50
40
30
20
10
0
0
Figure 1. On Region Characteristics
-80
1.0
0
Figure 5. Transfer Characteristics
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
V
I
Normalized On Resistance vs Junction
D
GS
= 35A
-40
1.5
= 10V
V
T
GS
V
J
V
, JUNCTION TEMPERATURE
DS
, GATE TO SOURCE VOLTAGE (V)
V
GS
GS
, DRAIN TO SOURCE VOLTAGE (V)
1
2.0
Temperature
= 4.5V
0
= 10V
T
2.5
40
J
= 175
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
µ
2
s
o
3.0
80
C
T
J
= 25°C unless otherwise noted
120
3.5
V
T
GS
3
J
(
o
= -55
T
= 3.5V
C
V
J
GS
160
)
4.0
= 25
o
= 3V
C
o
µ
C
s
200
4.5
4
3
Figure 2. Normalized
Figure 4.
Figure 6.
1E-3
0.01
200
100
0.1
10
40
30
20
10
7
6
5
4
3
2
1
0
0.0
1
0
3.0
0
V
V
Voltage vs Source Current
GS
Current and Gate Voltage
0.2
V
SD
10
T
GS
V
On-Resistance vs Gate to Source
= 0V
Source to Drain Diode Forward
, BODY DIODE FORWARD VOLTAGE (V)
J
GS
= 175
= 3V
4.5
, GATE TO SOURCE VOLTAGE (V)
I
D
0.4
, DRAIN CURRENT(A)
I
o
20
D
C
= 35A
Voltage
0.6
On-Resistance vs Drain
30
6.0
V
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
GS
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
T
J
= 3.5V
T
= 25
J
0.8
40
= 175
o
C
T
J
7.5
V
o
T
= -55
GS
C
J
www.fairchildsemi.com
1.0
50
= 25
= 10V
o
V
C
GS
o
C
= 4.5V
1.2
60
9.0
µ
µ
s
s
1.4
10
70