FDD8780 Fairchild Semiconductor, FDD8780 Datasheet - Page 2

• Manufacturer Part Number: FDD8780
• Description: MOSFET N-CH 25V 35A TO-252AA
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDD8780

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8.5 mOhm @ 35A, 10V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 35A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 29nC @ 10V
• Input Capacitance (ciss) @ Vds: 1440pF @ 13V
• Power - Max: 50W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 6.5 m Ohms
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 35 A
• Power Dissipation: 50 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDD8780TR

FDD8780/FDU8780 Rev. B
Notes:
1: Pulse time < 300µs, Duty cycle = 2%.
2: Starting T
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
B
∆B
I
I
V
r
C
C
C
R
t
t
t
t
Q
Q
Q
Q
V
t
Q
DSS
GSS
∆V
d(on)
r
d(off)
f
rr
DS(on)
VDSS
GS(th)
SD
∆T
∆T
iss
oss
rss
g
g
g
gs
gd
rr
Symbol
VDSS
GS(th)
J
J
J
= 25
o
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Drain to Source On Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller”Charge
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
C, L = 0.3mH, I
AS
= 22A ,V
Parameter
DD
= 23V, V
T
J
= 25°C unless otherwise noted
GS
= 10V.
I
I
25°C
V
V
V
D
D
V
I
25°C
V
V
V
T
V
f = 1MHz
f = 1MHz
V
V
V
V
V
V
I
I
DS
GS
GS
D
F
F
J
GS
GS
GS
GS
DS
DD
GS
GS
GS
GS
GS
= 250µA, V
= 250µA, referenced to
= 35A, di/dt = 100A/µs
= 35A, di/dt = 100A/µs
= 250µA, referenced to
= 175°C
= 0V
= 20V,
= ±20V
= 0V to 10V
= 13V, V
= 0V to 5V
= 0V, I
= 0V, I
= V
= 10V, I
= 4.5V, I
= 10V, I
= 13V, I
= 10V, R
2
Test Conditions
DS
, I
S
S
D
D
D
= 35A
= 15A
GS
D
D
GS
GS
= 35A
= 35A
= 35A
= 35A
= 250µA
= 0V
= 0V,
= 17Ω
T
V
I
I
D
g
J
DD
= 1.0mA
= 150°C
= 35A
= 13V
Min
25
1.2
1080
Typ
10.4
11.2
0.92
0.84
-6.3
265
180
3.5
4.7
1.8
6.5
9.1
0.9
12
43
24
21
28
20
7
9
www.fairchildsemi.com
±100
Max
1440
250
12.0
15.0
1.25
355
270
2.5
8.5
1.0
14
18
69
38
29
16
42
30
1
mV/°C
Units
mV/°C
mΩ
µA
nA
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
nC
ns
V
Ω
V
V