FDN5618P Fairchild Semiconductor, FDN5618P Datasheet - Page 4

• Manufacturer Part Number: FDN5618P
• Description: MOSFET P-CH 60V 1.25A SSOT3
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r
• Type: Power MOSFETr

Specifications of FDN5618P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 170 mOhm @ 1.25A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 1.25A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 13.8nC @ 10V
• Input Capacitance (ciss) @ Vds: 430pF @ 30V
• Power - Max: 460mW
• Mounting Type: Surface Mount
• Package / Case: 3-SSOT, SuperSOT-3
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.17 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 4.3 S
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 1.25 A
• Power Dissipation: 500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.17Ohm
• Drain-source On-volt: 60V
• Gate-source Voltage (max): ±20V
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SuperSOT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDN5618PTR

Typical Characteristics
0.001
10
8
6
4
2
0
0.01
100
Figure 9. Maximum Safe Operating Area.
0.1
10
0
Figure 7. Gate Charge Characteristics.
1
I
0.1
D
0.001
= -1.25A
0.01
R
0.1
SINGLE PULSE
R
DS(ON)
0.0001
θJA
1
V
T
GS
A
= 270
= 25
LIMIT
=-10V
2
D = 0.5
o
o
C/W
C
-V
0.2
0.1
0.05
DS
0.02
Q
, DRAIN-SOURCE VOLTAGE (V)
0.01
g
1
, GATE CHARGE (nC)
4
0.001
SINGLE PULSE
V
Figure 11. Transient Thermal Response Curve.
DC
DS
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
= -20V
6
10s
1s
10
100ms
-40V
0.01
10ms
8
-30V
1ms
10
100
0.1
t
1
, TIME (sec)
700
600
500
400
300
200
100
20
15
10
5
0
0.001
0
Figure 8. Capacitance Characteristics.
0
1
Figure 10. Single Pulse Maximum
0.01
2
-V
C
C
C
Power Dissipation.
ISS
OSS
DS
RSS
, DRAIN TO SOURCE VOLTAGE (V)
0.1
4
10
t
1
, TIME (sec)
1
6
P(pk)
Duty Cycle, D = t
T
R
R
J
θ JA
- T
θ JA
100
10
(t) = r(t) + R
A
8
= 270 °C/W
t
1
= P * R
t
2
SINGLE PULSE
R
θ JA
T
A
100
= 270°C/W
θ JA
FDN5618P Rev C(W)
= 25°C
10
1
θ JA
(t)
/ t
V
f = 1MHz
GS
2
1000
= 0 V
1000
12