FDN5618P Fairchild Semiconductor, FDN5618P Datasheet - Page 2

• Manufacturer Part Number: FDN5618P
• Description: MOSFET P-CH 60V 1.25A SSOT3
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r
• Type: Power MOSFETr

Specifications of FDN5618P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 170 mOhm @ 1.25A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 1.25A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 13.8nC @ 10V
• Input Capacitance (ciss) @ Vds: 430pF @ 30V
• Power - Max: 460mW
• Mounting Type: Surface Mount
• Package / Case: 3-SSOT, SuperSOT-3
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.17 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 4.3 S
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 1.25 A
• Power Dissipation: 500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.17Ohm
• Drain-source On-volt: 60V
• Gate-source Voltage (max): ±20V
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SuperSOT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDN5618PTR

Notes:
1.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width ≤=300 µs, Duty Cycle ≤=2.0
Electrical Characteristics
Symbol
Off Characteristics
BV
∆BV
===∆T
I
I
I
On Characteristics
V
∆V
===∆T
R
I
g
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
Drain–Source Diode Characteristics and Maximum Ratings
I
V
f
DSS
GSSF
GSSR
D(on)
d(on)
r
d(off)
S
FS
GS(th)
SD
DS(on)
iss
oss
rss
g
gs
gd
R
the drain pins. R
GS(th)
DSS
θJA
DSS
J
J
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
θJC
is guaranteed by design while R
a) 250°C/W when mounted on a
0.02 in
Parameter
2
(Note 2)
pad of 2 oz. copper.
(Note 2)
θCA
is determined by the user's board design.
T
V
I
V
V
V
V
I
V
V
V
V
V
V
f = 1.0 MHz
V
V
V
V
V
A
D
D
= 25°C unless otherwise noted
GS
DS
GS
GS
DS
GS
GS
GS
GS
DS
DS
DD
GS
DS
GS
GS
= –250 µA,Referenced to 25°C
= –250 µA,Referenced to 25°C
= –48 V,
= V
= –5 V,
= –30 V,
= –30 V,
= 0 V, I
= 20V,
= –20 V
= –10 V,
= –4.5 V,
= –10 V, I
= –10 V,
= –30 V,
= –10 V,
= –10 V
= 0 V,
Test Conditions
GS
, I
D
D
I
= –250 µA
= –250 µA
S
D
b) 270°C/W when mounted on a
= –0.42
V
V
= –3 A T
V
I
I
V
I
GS
DS
D
D
V
I
I
R
D
minimum pad.
DS
D
D
GS
DS
= –1.25 A
= –1.0 A
GEN
= –1.25 A,
= 0 V
= 0 V
= –1.25 A
= –1 A,
= 0 V
= 0 V,
= –5 V
= 6 Ω
J
=125°C
(Note 2)
Min
–60
–1
–5
0.185
0.148
0.245
Typ Max Units
–1.6
16.5
–0.7
–58
430
4.3
6.5
8.6
1.5
1.3
52
19
4
8
4
0.170
0.230
0.315
–0.42
–100
13.8
–1.2
100
–1
–3
13
16
30
8
FDN5618P Rev C(W)
mV/°C
mV/°C
nC
nC
nC
µA
nA
nA
pF
pF
pF
ns
ns
ns
ns
Ω
V
V
A
S
A
V