FQN1N50CTA Fairchild Semiconductor, FQN1N50CTA Datasheet - Page 6

• Manufacturer Part Number: FQN1N50CTA
• Description: MOSFET N-CH 500V 380MA TO-92
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQN1N50CTA

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 6 Ohm @ 190mA, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 380mA
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 6.4nC @ 10V
• Input Capacitance (ciss) @ Vds: 195pF @ 25V
• Power - Max: 890mW
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 6 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 0.6 S
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 0.38 A
• Power Dissipation: 890 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FQN1N50CTA

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FQN1N50C Rev. A