FQN1N50CTA Fairchild Semiconductor, FQN1N50CTA Datasheet - Page 3

• Manufacturer Part Number: FQN1N50CTA
• Description: MOSFET N-CH 500V 380MA TO-92
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQN1N50CTA

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 6 Ohm @ 190mA, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 380mA
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 6.4nC @ 10V
• Input Capacitance (ciss) @ Vds: 195pF @ 25V
• Power - Max: 890mW
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 6 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 0.6 S
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 0.38 A
• Power Dissipation: 890 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FQN1N50CTA

FQN1N50C Rev. A
Typical Performance Characteristics
Figure 5. Capacitance Characteristics
Figure 3. On-Resistance Variation vs.
Figure 1. On-Region Characteristics
10
10
10
-1
-2
0
10
400
300
200
100
Drain Current and Gate Voltage
-1
0
Top :
Bottom :
20
15
10
10
5
0
0.0
-1
15.0 V
10.0 V
4.5 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
V
C
C
0.5
C
GS
oss
iss
rss
V
1.0
DS
V
, Drain-Source Voltage [V]
DS
10
, Drain-Source Voltage [V]
0
10
I
D
1.5
, Drain Current [A]
0
2.0
V
GS
= 10V
2.5
C
C
C
iss
oss
rss
= C
= C
= C
10
gs
gd
ds
※
10
V
1
3.0
* Note :
+ C
※
+ C
1. 250µ s Pulse Test
2. T
GS
1
1. V
2. f = 1 MHz
Notes :
Note : T
gd
= 20V
gd
C
= 25 ℃
(C
GS
ds
= 0 V
J
3.5
= shorted)
= 25 ℃
4.0
3
12
10
10
10
10
8
6
4
2
0
10
Figure 2. Transfer Characteristics
Figure 4. Body Diode Forward Voltage
-1
0
Figure 6. Gate Charge Characteristics
0
0.2
-1
0
2
Variation vs. Source Current
25
150
1
o
0.4
C
o
C
4
V
Q
and Temperatue
V
V
V
V
SD
DS
DS
DS
G
GS
0.6
2
, Total Gate Charge [nC]
, Source-Drain voltage [V]
= 100V
= 250V
= 400V
, Gate-Source Voltage [V]
150 ℃
-55
o
0.8
3
C
25 ℃
6
1.0
4
※
1. V
2. 250µ s Pulse Test
※
Notes :
※
Note : I
GS
1. V
2. 250µ s Pulse Test
8
Notes :
= 0V
DS
1.2
5
D
= 40V
= 1A
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1.4
6
10