NDS355AN Fairchild Semiconductor, NDS355AN Datasheet - Page 5

• Manufacturer Part Number: NDS355AN
• Description: MOSFET N-CH 30V 1.7A SSOT3
• Manufacturer: Fairchild Semiconductor

Specifications of NDS355AN

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 85 mOhm @ 1.9A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 1.7A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 5nC @ 5V
• Input Capacitance (ciss) @ Vds: 195pF @ 15V
• Power - Max: 460mW
• Mounting Type: Surface Mount
• Package / Case: 3-SSOT, SuperSOT-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.085 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 1.7 A
• Power Dissipation: 500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NDS355ANTR

Figure 7. Breakdown Voltage Variation with
Typical Electrical Characteristics
V
GS
500
300
200
100
Figure 9. Capacitance Characteristics
60
40
20
0.1
Figure 11. Switching Test Circuit.
1.12
1.08
1.04
0.96
0.92
1
-50
f = 1 MHz
V
GS
I
R
0.2
D
= 0V
= 250µA
GEN
-25
Temperature
V
DS
T
0.5
, DRAIN TO SOURCE VOLTAGE (V)
0
J
V
, JUNCTION TEMPERATURE (°C)
IN
G
25
1
.
50
D
2
S
V
DD
75
R
L
5
100
DUT
.
(continued)
10
125
C oss
C iss
C rss
V
20
OUT
150
30
V
V
t
OUT
Figure 8. Body Diode Forward Voltage Variation with
d(on)
IN
0.0001
10
0.001
8
6
4
2
0
0.01
1 0 %
0.1
0
Figure 10. Gate Charge Characteristics
5
1
0
I = 1.6A
D
Figure 12. Switching Waveforms
V
GS
= 0V
t
5 0 %
on
0.2
1 0 %
V
SD
2
, BODY DIODE FORWARD VOLTAGE (V)
Source Current and Temperature
t
9 0 %
PULSE WIDTH
r
Q
g
0.4
, GATE CHARGE (nC)
T = 125°C
J
4
t
0.6
V
d(off)
DS
= 5V
25°C
5 0 %
15V
0.8
-55°C
9 0 %
.
6
t
1 0 %
10V
off
9 0 %
.
1
NDS355AN Rev.C
INVERTED
t
f
1.2
8
.