NDS331N Fairchild Semiconductor, NDS331N Datasheet - Page 5

• Manufacturer Part Number: NDS331N
• Description: MOSFET N-CH 20V 1.3A SSOT3
• Manufacturer: Fairchild Semiconductor
• Type: Power MOSFETr

Specifications of NDS331N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 160 mOhm @ 1.5A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 1.3A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 5nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 162pF @ 10V
• Power - Max: 460mW
• Mounting Type: Surface Mount
• Package / Case: 3-SSOT, SuperSOT-3
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.16Ohm
• Drain-source On-volt: 20V
• Gate-source Voltage (max): 8V
• Drain Current (max): 1.3A
• Power Dissipation: 500mW
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SuperSOT
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.16 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: 8 V
• Continuous Drain Current: 1.3 A
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NDS331NTR

V
Typical Electrical Characteristics
GS
Figure 7. Breakdown Voltage Variation with
600
400
200
100
Figure 9. Capacitance Characteristics
Figure 11. Switching Test Circuit
50
20
10
0.1
1.12
1.08
1.04
0.96
0.92
1
-50
R
f = 1 MHz
V
I
GS
D
GEN
0.2
= 250µA
= 0V
-25
V
DS
T
Temperature.
V
0
J
, DRAIN TO SOURCE VOLTAGE (V)
0.5
IN
, JUNCTION TEMPERATURE (°C)
G
25
1
D
50
S
V
DD
2
R
75
L
.
DUT
100
5
.
(continued)
C iss
C oss
C rss
125
V
10
OUT
150
20
V
t
V
Figure 8. Body Diode Forward Voltage Variation with
OUT
d(on)
5
4
3
2
1
0
0.0001
IN
0
0.001
Figure 10. Gate Charge Characteristics
0.01
1 0 %
0.1
I = 1.3A
D
1
0
Figure 12. Switching Waveforms
V
GS
= 0V
t
1
0.2
5 0 %
V
on
SD
1 0 %
, BODY DIODE FORWARD VOLTAGE (V)
T = 125°C
J
Source Current and Temperature
Q
t
9 0 %
PULSE WIDTH
0.4
r
g
, GATE CHARGE (nC)
2
25°C
0.6
-55°C
t
d(off)
V
DS
3
= 5V
0.8
5 0 %
9 0 %
15V
.
1
t
1 0 %
off
4
.
9 0 %
10V
NDS331N Rev.E
1.2
INVERTED
t
f
5
.