NDS331N Fairchild Semiconductor, NDS331N Datasheet - Page 2

• Manufacturer Part Number: NDS331N
• Description: MOSFET N-CH 20V 1.3A SSOT3
• Manufacturer: Fairchild Semiconductor
• Type: Power MOSFETr

Specifications of NDS331N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 160 mOhm @ 1.5A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 1.3A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 5nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 162pF @ 10V
• Power - Max: 460mW
• Mounting Type: Surface Mount
• Package / Case: 3-SSOT, SuperSOT-3
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.16Ohm
• Drain-source On-volt: 20V
• Gate-source Voltage (max): 8V
• Drain Current (max): 1.3A
• Power Dissipation: 500mW
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SuperSOT
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.16 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: 8 V
• Continuous Drain Current: 1.3 A
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NDS331NTR

ELECTRICAL CHARACTERISTICS
Symbol
OFF CHARACTERISTICS
BV
I
I
I
ON CHARACTERISTICS
V
R
I
g
DYNAMIC CHARACTERISTICS
C
C
C
SWITCHING CHARACTERISTICS
t
t
t
t
Q
Q
Q
DSS
GSSF
GSSR
D(ON)
D(on)
r
D(off)
f
FS
GS(th)
DS(ON)
iss
oss
rss
g
gs
gd
DSS
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
Gate Threshold Voltage
Static Drain-Source On-Resistance
On-State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
(Note 2)
(Note 2)
(T
A
= 25°C unless otherwise noted)
Conditions
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
f = 1.0 MHz
GS
DS
GS
GS
DS
GS
GS
GS
GS
DS
DS
DD
GS
DS
GS
= 0 V, I
= 16 V, V
= 8 V, V
= -8 V, V
= V
= 2.7 V, I
= 4.5 V, I
= 2.7 V, V
= 4.5 V, V
= 5 V, I
= 10 V, V
= 5 V, I
= 5 V, R
= 5 V, I
= 4.5 V
GS
, I
D
D
D
D
D
DS
= 250 µA
= 250 µA
= 1.3 A,
= 1 A,
DS
Gen
D
D
= 1.3 A,
GS
DS
DS
GS
= 0 V
= 1.3 A
= 1.5 A
= 0 V
= 0 V
= 6
= 5 V
= 5 V
= 0 V,
T
T
T
J
J
J
=125°C
=125°C
=125°C
Min
0.5
0.3
20
3
4
Typ
0.53
0.15
0.24
0.11
162
0.7
3.5
3.5
0.3
85
28
25
10
5
5
1
Max
-100
0.21
0.16
100
0.8
0.4
10
20
40
20
20
1
1
5
NDS331N Rev.E
Units
µA
µA
nA
nA
nC
nC
nC
ns
ns
ns
ns
V
V
A
S
pF
pF
pF