FDV304P Fairchild Semiconductor, FDV304P Datasheet - Page 4

• Manufacturer Part Number: FDV304P
• Description: MOSFET P-CH 25V 460MA SOT-23
• Manufacturer: Fairchild Semiconductor
• Type: Power MOSFETr

Specifications of FDV304P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.1 Ohm @ 500mA, 4.5V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 460mA
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 1.5nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 63pF @ 10V
• Power - Max: 350mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 1.1 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 0.8 S
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: 8 V
• Continuous Drain Current: 0.46 A
• Power Dissipation: 350 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 1.1Ohm
• Drain-source On-volt: 25V
• Gate-source Voltage (max): 8V
• Drain Current (max): 460mA
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SOT-23
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDV304PTR

Typical Electrical And Thermal Characteristics
5
4
3
2
1
0
0.05
0.02
0.01
Figure 7. Gate Charge Characteristics.
0.5
0.1
0
Figure 9. Maximum Safe Operating Area.
2
1
0.1
I = -0.25A
D
0.005
0.002
0.001
0.05
0.02
0.01
0.2
SINGLE PULSE
R
0.5
0.2
0.1
0.2
0.0001
V
JA
1
T = 25°C
GS
A
= 357 °C/W
= -2.7V
D = 0.5
0.4
- V
0.05
0.02
0.01
0.2
0.1
0.5
DS
Q
Single Pulse
g
, DRAIN-SOURCE VOLTAGE (V)
, GATE CHARGE (nC)
0.6
1
0.001
0.8
2
Figure 11. Transient Thermal Response Curve.
V
DS
= 5V
1
5
10V
15V
0.01
10
1.2
20
1.4
35
0.1
t , TIME (sec)
1
1 5 0
1 0 0
5 0
2 0
1 0
5
0.1
Figure 8. Capacitance Characteristics.
0.001
5
4
3
2
1
0
Figure 10. Single Pulse Maximum Power
f = 1 MHz
V
GS
1
= 0 V
0.3
0.01
-V
DS
0.5
Dissipation.
, DRAIN TO SOURCE VOLTAGE (V)
SINGLE PULSE TIME (SEC)
0.1
P(pk)
1
1 0
T - T
R
R
Duty Cycle, D = t
J
JA
JA
t
1
A
(t) = r(t) * R
= 357 °C/W
t
1
= P * R
2
JA
1
5
R
SINGLE PULSE
/t
1 0 0
10
(t)
2
JA
JA
T = 25°C
A
=357° C/W
1 0
C oss
C iss
C rss
FDV304P Rev.E
3 0 0
1 5
100
2 5
300
1