FDV304P Fairchild Semiconductor, FDV304P Datasheet

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FDV304P

Manufacturer Part Number
FDV304P
Description
MOSFET P-CH 25V 460MA SOT-23
Manufacturer
Fairchild Semiconductor
Type
Power MOSFETr
Datasheet

Specifications of FDV304P

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
1.1 Ohm @ 500mA, 4.5V
Drain To Source Voltage (vdss)
25V
Current - Continuous Drain (id) @ 25° C
460mA
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
1.5nC @ 4.5V
Input Capacitance (ciss) @ Vds
63pF @ 10V
Power - Max
350mW
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
1.1 Ohm @ 4.5 V
Forward Transconductance Gfs (max / Min)
0.8 S
Drain-source Breakdown Voltage
25 V
Gate-source Breakdown Voltage
8 V
Continuous Drain Current
0.46 A
Power Dissipation
350 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Number Of Elements
1
Polarity
P
Channel Mode
Enhancement
Drain-source On-res
1.1Ohm
Drain-source On-volt
25V
Gate-source Voltage (max)
8V
Drain Current (max)
460mA
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
SOT-23
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDV304PTR

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Symbol
V
V
I
P
T
ESD
THERMAL CHARACTERISTICS
R
© 1997 Fairchild Semiconductor Corporation
D
FDV304P
Digital FET, P-Channel
This P-Channel enhancement mode field effect transistors is
produced using Fairchild's proprietary, high cell density, DMOS
technology. This very high density process is tailored to minimize
on-state resistance at low gate drive conditions. This device is
designed especially for application in battery power applications
such as notebook computers and cellular phones. This device
has excellent on-state resistance even at gate drive voltages as
low as 2.5 volts.
Absolute Maximum Ratings
General Description
DSS
GSS
D
J
,T
JA
STG
Mark:304
SOT-23
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Maximum Power Dissipation
Operating and Storage Temperature Range
Electrostatic Discharge Rating MIL-STD-883D
Human Body Model (100pf / 1500 Ohm)
Thermal Resistance, Junction-to-Ambient
SuperSOT
TM
- Continuous
- Pulsed
-6
T
A
= 25
o
C unless other wise noted
SuperSOT
TM
-8
Features
-25 V, -0.46 A continuous, -1.5 A Peak.
Very low level gate drive requirements allowing direct
operation in 3V circuits. V
Gate-Source Zener for ESD ruggedness.
>6kV Human Body Model
Compact industry standard SOT-23 surface mount
package.
SO-8
R
R
DS(ON)
DS(ON)
G
-55 to 150
FDV304P
= 1.5
= 1.1
-0.46
0.35
-1.5
357
6.0
-25
-8
SOT-223
D
@ V
@ V
GS(th)
GS
GS
< 1.5V.
= -2.7 V.
= -4.5 V
S
August 1997
SOIC-16
FDV304P Rev.E
Units
°C/W
°C
kV
W
V
V
A
1

Related parts for FDV304P

FDV304P Summary of contents

Page 1

... Human Body Model Compact industry standard SOT-23 surface mount package. TM SuperSOT -8 SO unless other wise noted A August 1997 -4.5 V DS(ON 1 -2.7 V. DS(ON) GS < 1.5V. GS(th) SOIC-16 SOT-223 FDV304P -25 -8 -0.46 -1.5 0.35 -55 to 150 6.0 357 FDV304P Rev.E Units °C kV °C/W 1 ...

Page 2

... - 1.0 MHz -0 -4 GEN Min Typ Max - - 55°C J -100 o 2.1 C -0.65 -0.86 -1.5 1.22 1.5 0.87 1.1 T =125°C 1. -0 110 35 70 1.1 1.5 0.32 0.25 -0.5 -0.89 -1.2 (Note) Units µA µ FDV304P Rev.E ...

Page 3

... I , DRAIN CURRENT (A) D Drain Current and Gate Voltage -0.5A 25°C D 125°C -2 -2.5 -3 -3 GATE TO SOURCE VOLTAGE (V) GS Gate-To- Source Voltage 125°C J 25°C -55°C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD Temperature 1.2 1 FDV304P Rev.E ...

Page 4

... Figure 10. Single Pulse Maximum Power 0.01 0 TIME (sec iss C oss C rss = 0 V 0.3 0 DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R =357° C 25°C A 0.01 0 SINGLE PULSE TIME (SEC) Dissipation. R ( 357 °C/W JA P(pk ( Duty Cycle 100 300 FDV304P Rev.E ...

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