2N7002 Fairchild Semiconductor, 2N7002 Datasheet - Page 5

• Manufacturer Part Number: 2N7002
• Description: MOSFET N-CH 60V 115MA SOT-23
• Manufacturer: Fairchild Semiconductor
• Type: Small Signalr

Specifications of 2N7002

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 7.5 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 115mA
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Input Capacitance (ciss) @ Vds: 50pF @ 25V
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 7.5 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 0.08 S
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.115 A
• Power Dissipation: 200 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 7.5Ohm
• Drain-source On-volt: 60V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SOT-23
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Dc: 09+
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 2N7002N; 2N7002NTR

Typical Electrical Characteristics
V
GS
6 0
4 0
2 0
1 0
5
2
1
1.075
1.025
0.975
0.925
Figure 11.
1
Figure 9. Capacitance Characteristics
1.05
0.95
Figure 7. Breakdown Voltage Variation
1.1
1
-50
I
R
D
with Temperature
GEN
f = 1 MHz
V
= 250µA
-25
2
GS
V
DS
= 0V
3
T , JUNCTION TEM PERATURE (°C)
, DRAIN TO SOURCE VOLTAGE (V)
0
J
V
IN
G
5
25
50
D
S
V
1 0
DD
75
R
2N7000 / 2N7002 /NDS7002A
L
DUT
100
2 0
(continued)
C iss
C oss
3 0
125
V
C rss
OUT
150
5 0
Figure 8. Body Diode Forward Voltage Variation with
Output, V out
Input, V in
0 .0 0 5
0 .0 0 1
1 0
Figure 12. Switching Waveforms
Figure 10. Gate Charge Characteristics
0 .0 5
0 .0 1
8
6
4
2
0
0 .5
0 .1
0
t
2
1
d(on)
0 .2
10%
V
V
I
D
T = 1 2 5 ° C
DS
GS
J
= 5 0 0 m A
0 .4
= 2 5 V
0 .4
V
= 0V
SD
t
50%
1 1 5 m A
on
10%
, BODY DIODE FORW A RD VOLTAGE (V)
Q
2 8 0 m A
t
0 .6
Pulse Width
90%
r
g
0 .8
, GATE CHARGE (nC)
2 5 ° C
0 .8
t
d(off)
1 .2
50%
-5 5 ° C
1
90%
t
10%
off
90%
1 .6
2N7000.SAM Rev. A1
1 .2
t
Inverted
f
1 .4
2