2N7002 Fairchild Semiconductor, 2N7002 Datasheet - Page 2

• Manufacturer Part Number: 2N7002
• Description: MOSFET N-CH 60V 115MA SOT-23
• Manufacturer: Fairchild Semiconductor
• Type: Small Signalr

Specifications of 2N7002

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 7.5 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 115mA
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Input Capacitance (ciss) @ Vds: 50pF @ 25V
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 7.5 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 0.08 S
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.115 A
• Power Dissipation: 200 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 7.5Ohm
• Drain-source On-volt: 60V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SOT-23
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Dc: 09+
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 2N7002N; 2N7002NTR

Electrical Characteristics
Symbol
OFF CHARACTERISTICS
BV
I
I
I
ON CHARACTERISTICS
V
R
V
DSS
GSSF
GSSR
GS(th)
DS(ON)
DS(ON)
DSS
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
Gate Threshold Voltage
Static Drain-Source On-Resistance V
Drain-Source On-Voltage
(Note 1)
T
A
= 25°C unless otherwise noted
Conditions
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
GS
DS
DS
GS
GS
GS
GS
DS
DS
GS
GS
GS
GS
GS
GS
GS
GS
GS
GS
GS
GS
= 0 V, I
= 48 V, V
= 60 V, V
= 15 V, V
= 20 V, V
= -15 V, V
= -20 V, V
= V
= V
= 10 V, I
= 4.5 V, I
= 10 V, I
= 5.0 V, I
= 10 V, I
= 5.0 V, I
= 10 V, I
= 4.5 V, I
= 10 V, I
= 5.0 V, I
= 10 V, I
= 5.0 V, I
GS
GS
, I
, I
D
D
D
D
D
D
= 10 µA
= 1 mA
= 250 µA
D
D
D
D
D
D
GS
GS
DS
DS
D
D
D
DS
DS
= 500 mA
= 500 mA
= 500 mA
= 75 mA
= 50 mA
= 50 mA
= 500 mA
= 500mA
= 500mA
= 75 mA
= 50 mA
= 50 mA
= 0 V
= 0 V
= 0 V
= 0 V
= 0 V
= 0 V
T
T
T
T
T
T
T
J
J
J
J
J
J
J
=125°C
=125°C
=125°C
=100°C
=125°C
=125°C
=100C
NDS7002A
NDS7002A
NDS7002A
NDS7002A
NDS7002
NDS7002A
2N7000
2N7002
2N7000
2N7002
2N7000
2N7002
2N7000
2N7002
2N7000
2N7002
2N7000
2N7002
Typ e
All
A
Min
0.8
60
1
0.14
0.09
0.09
Typ
2.1
2.1
1.2
1.9
1.8
1.2
1.7
1.7
2.4
1.2
1.7
2.8
0.6
0.6
0.6
2
-100
13.5
13.5
3.75
0.15
Max
100
0.5
-10
2.5
5.3
7.5
7.5
3.5
2.5
0.4
1.5
10
1
1
1
3
5
9
2
3
5
1
2N7000.SAM Rev. A1
Units
mA
mA
µA
µA
nA
nA
nA
nA
V
V
V