FDW2503NZ Fairchild Semiconductor, FDW2503NZ Datasheet - Page 4

• Manufacturer Part Number: FDW2503NZ
• Description: MOSFET N-CH DUAL 20V 5.5A 8-TSSO
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDW2503NZ

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 20 mOhm @ 5.5A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 5.5A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1286pF @ 10V
• Power - Max: 600mW
• Mounting Type: Surface Mount
• Package / Case: 8-TSSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Characteristics
0.01
100
0.1
10
1
5
4
3
2
1
0
Figure 9. Maximum Safe Operating Area.
0.001
0.1
0
0.01
Figure 7. Gate Charge Characteristics.
0.1
SINGLE PULSE
R
0.0001
R
1
I
JA
DS(ON)
V
D
T
GS
A
= 5.5 A
= 125
= 25
= 4.5V
2
LIMIT
o
o
C/W
C
D = 0.5
V
0.
0.1
D S
0.05
4
0.02
, DRAIN-SOURCE VOLTAGE (V)
0.01
Q
1
g
, GATE CHARGE (nC)
0.001
SINGLE PULSE
6
DC
1s
Figure 11. Transient Thermal Response Curve.
V
100ms
8
DS
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
= 5V
10ms
10
0.01
10V
10
1ms
15V
100 s
12
14
100
0.1
t
1
, TIME (sec)
2000
1600
1200
800
400
50
40
30
20
10
0
0.001
0
Figure 8. Capacitance Characteristics.
0
1
Figure 10. Single Pulse Maximum
0.01
V
Power Dissipation.
DS
5
, DRAIN TO SOURCE VOLTAGE (V)
0.1
C
C
10
C
OSS
RSS
ISS
t
1
, TIME (sec)
10
1
P(pk)
Duty Cycle, D = t
T
R
10
R
J
100
- T
JA
JA
(t) = r(t) * R
t
1
A
SINGLE PULSE
R
= 125
t
15
= P * R
2
JA
T
FDW2503NZ Rev C1(W)
A
= 125°C/W
100
= 25°C
f = 1 MHz
V
o
GS
C/W
JA
= 0 V
1
JA
(t)
/ t
2
1000
1000
20